IAUC100N04S6L025ATMA1 vs IAUC28N08S5L230ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L025ATMA1 disebabkan oleh Infineon dan IAUC28N08S5L230ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΩ OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC100N04S6L025ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-5 Power MOSFET |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (PD) at TC=25C | 62 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | -55 °C to +175 °C |
| Kemasan | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | — | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 23 mΩ (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | — | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101) |