IAUC100N04S6L025ATMA1 vs IAUC28N08S5L230ATMA1 对比

详细并排对比 IAUC100N04S6L025ATMA1 出自 Infineon 和 IAUC28N08S5L230ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC100N04S6L025ATMA1 IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon

IAUC100N04S6L025ATMA1 ✓ 量产中

规格对比

参数 IAUC100N04S6L025ATMA1 IAUC28N08S5L230ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.62 $0.71
Technology OptiMOS 6 40V trench MOSFET OptiMOS-5 Power MOSFET
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-State Resistance RDS(on) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Power Dissipation (PD) at TC=25C 62 W —
工作结温 -55 C to +175 C -55 °C to +175 °C
封装 PG-TDSON-8 (SuperSO8 5x6 mm) PG-TDSON-8-33 (5x6 mm SSO8)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified —
MSL 等级 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
RoHS 状态 Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Series — OptiMOS-5
FET Type — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) — 28 A
Pulsed Drain Current (I<sub>DM</sub>) — [DATA_NEEDED: pulsed drain current]
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 23 mΩ (typ)
Gate-Source Threshold (V<sub>GS(th)</sub>, typ) — 2.5 V
Gate Charge (Q<sub>g</sub>, typ) — [DATA_NEEDED: total gate charge]
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) — 38 W
Automotive Qualified — Yes (AEC-Q101)

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