IAUC100N04S6N022ATMA1 vs IPB100N04S4H2ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and IPB100N04S4H2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N022ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.42 |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | β |
| Package | PG-TDSON-8 (5x6 mm) leadless | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Polarity | N-Channel enhancement mode | β |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 qualified |
| Pin Count | 8 | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | β | 2.4 mΞ© typical |
| Maximum Power Dissition (PD) at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +175C |
| Storage Temperature | β | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | β | 100% avalanche tested |
| RoHS Compliance | β | Compliant (Green Product) |