IAUC100N04S6N022ATMA1 vs IPB100N04S4H2ATMA1 비교
다음의 상세 나란히 비교: IAUC100N04S6N022ATMA1 제조: Infineon 및 IPB100N04S4H2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUC100N04S6N022ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.82 | $1.42 |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| 패키지 | PG-TDSON-8 (5x6 mm) leadless | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 qualified |
| 핀 수 | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS 상태 | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| 동작 접합 온도 | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| RoHS Compliance | — | Compliant (Green Product) |