IAUC100N04S6N022ATMA1 vs IPB100N04S4H2ATMA1 对比
详细并排对比 IAUC100N04S6N022ATMA1 出自 Infineon 和 IPB100N04S4H2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 ✓ 量产中规格对比
| 参数 | IAUC100N04S6N022ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.42 |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| 封装 | PG-TDSON-8 (5x6 mm) leadless | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (junction) | — |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | AEC-Q101 qualified |
| 引脚数量 | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL 等级 | 1 (per JEDEC J-STD-020) | MSL1 (up to 260C peak reflow) |
| RoHS 状态 | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | — | 2.4 mΩ typical |
| Maximum Power Dissition (PD) at TC=25C | — | 115 W |
| 工作结温 | — | -55C to +175C |
| Storage Temperature | — | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | — | 100% avalanche tested |
| RoHS Compliance | — | Compliant (Green Product) |