IAUC100N04S6N022ATMA1 vs IPC100N04S51R7ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and IPC100N04S51R7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveInfineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N022ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.82 |
| Technology | OptiMOS 6, N-Channel MOSFET | β |
| Drain-Source Voltage (V_DSS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Power Dissipation (P_D, Tc) | 75 W | β |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | β |
| Package | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Polarity | N-Channel enhancement mode | β |
| Automotive Qualification | AEC-Q100 (IAUC family) | β |
| Pin Count | 8 | β |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | β |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (260 Β°C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| Transistor Type | β | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | β | 40 V |
| Continuous Drain Current ID | β | 100 A (at TC) |
| Pulsed Drain Current IDM | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | β | 115 W (at TC) |
| Thermal Resistance RthJC | β | 1.3 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% tested |
| Built-in Body Diode | β | Yes |