IAUC100N04S6N022ATMA1 vs IPC100N04S51R7ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUC100N04S6N022ATMA1 tarafından Infineon ve IPC100N04S51R7ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUC100N04S6N022ATMA1 | IPC100N04S51R7ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Technology | OptiMOS 6, N-Channel MOSFET | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| Paket | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | — |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | — |
| Pin Sayısı | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | MSL1 (260 °C peak reflow) |
| RoHS Durumu | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS-5 |
| Transistor Türü | — | N-Channel MOSFET, Enhancement Mode |
| Drain-Source Voltage VDS | — | 40 V |
| Continuous Drain Current ID | — | 100 A (at TC) |
| Pulsed Drain Current IDM | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage VGS | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation PD | — | 115 W (at TC) |
| Thermal Resistance RthJC | — | 1.3 K/W |
| İşletim Jant Sıcaklığı | — | -55 °C to +175 °C |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% tested |
| Built-in Body Diode | — | Yes |