IAUC100N04S6N028ATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6N028ATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6N028ATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.42 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 40V | OptiMOS 5 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 100 A | β |
| Pulsed Drain Current (I_DM) | 400 A | β |
| R_DS(on) max @ V_GS=10V | 2.8 mΞ© (typical) | β |
| Gate Threshold Voltage (V_GS(th)) | 1.5 V to 2.5 V | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g in nC] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 62 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +175C |
| Package | PG-TDSON-8 (TDSON-8) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| MSL Level | β | 1 (unlimited) |