IAUC100N08S5N043ATMA1 vs BSC040N08NS5ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and BSC040N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveInfineon
BSC040N08NS5ATMA1 - 80V 100A 4mOhm OptiMOS 5 MOSFET | Infineon
BSC040N08NS5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N08S5N043ATMA1 | BSC040N08NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 100 A (package limited) | β |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W | β |
| Maximum R<sub>DS(on)</sub> | 4.3 mΞ© | β |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Moisture Sensitivity Level (MSL) | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | β |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (N-channel trench MOSFET) |
| Channel Mode | Enhancement | β |
| Part Number | β | BSC040N08NS5ATMA1 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25C) | β | 100 A |
| Maximum Drain Current (ID, Tc=25C, package-limited) | β | 121 A |
| On-Resistance (RDS(on) max, VGS=10V) | β | 4 mOhm |
| Power Dissipation (Ta=25C, 1inΒ² PCB) | β | 2.5 W |
| Power Dissipation (Tc=25C) | β | 104 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| RoHS Status | β | Compliant |
| MSL Level | β | 1 |
| Primary Application | β | Synchronous rectification in telecom and server power supplies |