IAUC100N08S5N043ATMA1 vs IAUCN08S7N034ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUCN08S7N034ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveInfineon
IAUCN08S7N034ATMA1
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΞ© Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N08S5N043ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $1.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 100 A (package limited) | 120 A |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W | β |
| Maximum R<sub>DS(on)</sub> | 4.3 mΞ© | β |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8-34 (TDSON EP) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Moisture Sensitivity Level (MSL) | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Technology | OptiMOS 5 (Trench) | β |
| Channel Mode | Enhancement | β |
| Series | β | OptiMOSβ’ 7 |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | β | 3.4 mΞ© |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | β | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | β | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | β | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | β | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | β | 23 pF |
| Power Dissipation (P<sub>D</sub>) | β | 118 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| MSL Level | β | MSL 1 (unlimited floor life) |
| RoHS Status | β | Compliant |