IAUC100N08S5N043ATMA1 vs IAUCN08S7N034ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC100N08S5N043ATMA1 von Infineon und IAUCN08S7N034ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ AktivInfineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC100N08S5N043ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,72 | $1,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET (Enhancement Mode) | N-Channel MOSFET |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | 120 A |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Betriebstemperaturbereich | -55°C to +175°C | — |
| Gehäuse | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8-34 (TDSON EP) |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 8 | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | — |
| Channel Mode | Enhancement | — |
| Series | — | OptiMOS™ 7 |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +175°C |
| MSL-Level | — | MSL 1 (unlimited floor life) |
| RoHS-Status | — | Compliant |