IAUC100N10S5L054ATMA1 vs ISC037N12NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5L054ATMA1 disebabkan oleh Infineon dan ISC037N12NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IAUC100N10S5L054ATMA1 | ISC037N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 (IAUC automotive family) | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (V_DS) | 100 V | — |
| Gate-to-Source Voltage (V_GS) | [DATA_NEEDED: max V_GS value] | — |
| Continuous Drain Current (I_D, Tj) | 101 A | — |
| Power Dissipation (P_D, Tc) | 130 W | — |
| R_DS(on) max at V_GS=10V | 5.4 mΩ | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55C to +175C (junction) |
| Kemasan | PG-TDSON-8-34 (surface mount) | PG-TDSON-8 FL (SuperSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | OptiMOS 5 trench | OptiMOS 6 (N-channel trench MOSFET) |
| Aras MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (Vds) | — | 120 V |
| Continuous Drain Current (Id) at Ta=25C | — | 19.2 A |
| Pulsed Drain Current (Idm) at Tc | — | 163 A |
| On-Resistance Rds(on) typ at Vgs=10V | — | 3.7 mOhm |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 214 W |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Gate Charge (Qg) typ | — | [DATA_NEEDED: Qg total] |
| Avalanche Energy Rated | — | Yes (single-pulse) |