IAUC120N04S6L012ATMA1 - 40V 120A OptiMOS 6 N-MOSFET | Infineon
MPN: IAUC120N04S6L012ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.82 | $910.00 |
| 1,000 | $1.54 | $1,540.00 |
| 5,000 | $1.21 | $6,050.00 |
Drop-in alternatives for IAUC120N04S6L012ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N04S6L025ATMA1
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View Datasheet →IAUC60N04S6N031HATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →IAUC120N06S5L011ATMA1
✅ Drop-In✓ In Stock
$2.1 / Unit
View Datasheet →IAUC120N04S6L012ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 40V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC | 120 A |
| Pulsed Drain Current (IDM) | 480 A |
| On-State Resistance (RDS(on)) at 10V VGS | 1.2 mΩ (typ) |
| Gate-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (PD) at TC | 115 W |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | PG-TDSON-8 (TDSON-8, surface mount with exposed pad) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Delivery Form | Tape & Reel |
IAUC120N04S6L012ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input; drive with 10 V VGS for full enhancement |
| Pin 2 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 3 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 4 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 5 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 6 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 7 | SOURCE — Source connection (electrically common to thermal pad region) |
| Pin 8 | DRAIN (Exposed Pad) — Drain connection via exposed thermal pad on underside of package |
Safe Operating Area - IAUC120N04S6L012ATMA1
Typical Applications
IAUC120N04S6L012ATMA1 is suitable for 6 applications: Automotive ECU 12 V Power Supply, Electric Power Steering (EPS) H-Bridge, Battery Management System (BMS) Protection Switch, Industrial High-Current DC-DC Converter, Hot-Swap / OR-ing Controller Switch, BLDC Motor Drive Three-Phase Inverter.
Automotive ECU 12 V Power Supply
The IAUC120N04S6L012ATMA1 is well suited to 12 V automotive ECU power supplies where it acts as the high-side or low-side switch in synchronous buck converters feeding microcontrollers and ASIL-rated ICs. Its 1.2 mΩ typical RDS(on) at 10 V VGS limits conduction loss to about 12 W at 100 A load, which keeps the junction temperature rise manageable on a properly laid-out PCB. AEC-Q101 qualification and a 175 °C maximum junction temperature support under-hood ambient conditions up to 105 °C. Compared with a Schottky-diode-based rectifier, a synchronous MOSFET at this RDS(on) dramatically reduces rectifier loss and improves overall efficiency by 4-6 percentage points at full load, helping the ECU meet automotive quiescent-current and efficiency budgets.
Recommended
Electric Power Steering (EPS) H-Bridge
In EPS motor drive H-bridges, the IAUC120N04S6L012ATMA1 serves as the four switching elements that commutate the BLDC motor stator phases. Its 480 A pulsed drain current (IDM) rating comfortably handles the inrush and braking energy of EPS motors, while 1.2 mΩ RDS(on) reduces I²R loss and therefore motor-copper heating. AEC-Q101 qualification is essential for chassis-mounted automotive systems, and the PG-TDSON-8 package's exposed pad allows direct solder attachment to a copper heat-spreader for sustained 100 A+ operation. The OptiMOS 6 generation also offers lower Qg than the prior OptiMOS 5 family, reducing switching loss at the 20 kHz PWM frequencies typical of EPS drives.
Recommended
Battery Management System (BMS) Protection Switch
The IAUC120N04S6L012ATMA1 functions as the high-current charge/discharge MOSFET in a 12 V Li-ion BMS, sitting in series between the battery pack and the load/charger. Its 1.2 mΩ RDS(on) limits the always-on conduction loss in BMS applications that are continuously in the discharge path - a 100 A continuous load dissipates only 12 W. AEC-Q101 qualification satisfies the automotive functional-safety requirements for battery-pack electronics. The 40 V VDS rating provides 2x headroom over a 12 V nominal battery (which can spike to 18 V under load-dump conditions), so a single IAUC120N04S6L012ATMA1 can replace two back-to-back lower-voltage MOSFETs used for reverse-battery protection, halving the footprint.
Recommended
Industrial High-Current DC-DC Converter
In 24 V industrial buck and buck-boost converters, the IAUC120N04S6L012ATMA1 acts as the main switching element, with 40 V VDS providing adequate margin for 24 V nominal rails (which can swing to 36 V during transients). Its 1.2 mΩ RDS(on) enables 50-100 A converter designs with >95 % efficiency, while the 115 W power dissipation rating gives significant thermal headroom for continuous operation. The PG-TDSON-8 package is well supported by standard reflow processes and the part's MSL-1 rating simplifies logistics. Compared with older OptiMOS 3 or OptiMOS 5 designs, the 6th-generation technology cuts switching loss by ~30 %, allowing higher switching frequencies and smaller magnetics.
Recommended
Hot-Swap / OR-ing Controller Switch
The IAUC120N04S6L012ATMA1 is ideal for 12 V server and telecom hot-swap controllers where it must survive inrush surges while dissipating steady-state load current. Its 480 A pulsed drain current (IDM) handles the inrush of large bulk capacitors, and the 1.2 mΩ RDS(on) keeps the steady-state voltage drop below 100 mV at 100 A. OR-ing applications benefit from the low body-diode forward drop characteristic of OptiMOS 6 technology, which reduces shoot-through losses during input-source switchover. AEC-Q101 qualification is overkill for telecom but provides extra margin for industrial and outdoor applications with harsh thermal environments.
Recommended
BLDC Motor Drive Three-Phase Inverter
The IAUC120N04S6L012ATMA1 is well matched to the low-side switches of a three-phase BLDC inverter for industrial motor drives up to 100 A phase current. Its 1.2 mΩ RDS(on) reduces conduction loss in the PWM low-side path, while the OptiMOS 6 generation's low Qg keeps switching loss manageable at 20-50 kHz PWM. The PG-TDSON-8 package enables direct PCB mounting of all six switches in a compact three-phase footprint. For applications requiring both low-side and high-side switches, the part can be paired with a P-channel MOSFET in a half-bridge configuration, though most modern designs prefer all-N-channel bridges for symmetric RDS(on).
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N04S6L012ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N04S6L025ATMA1 | IAUC60N04S6N031HATMA1 | IAUC120N06S5L011ATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| VDS (Drain-Source Voltage) | 40 V | 40 V | 40 V | 60 V (+50%) |
| Continuous Drain Current (ID) at TC | 120 A | 100 A (-17%) | 60 A (-50%) | 120 A (same) |
| Pulsed Drain Current (IDM) | 480 A | 400 A (-17%) | 240 A (-50%) | 480 A (same) |
| RDS(on) typical at 10V VGS | 1.2 mΩ | 2.5 mΩ (+108%) | 3.1 mΩ (+158%) | 1.1 mΩ (slightly lower) |
| Power Dissipation (PD) at TC | 115 W | 100 W | 75 W | 115 W |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Generation / Process | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 |
Key Differentiators
- Lowest RDS(on) in 40 V OptiMOS 6 120A class (vs IAUC100N04S6L025ATMA1)
- 40 V voltage class optimized for 12 V automotive (vs IAUC120N06S5L011ATMA1)
- OptiMOS 6 generation (newest 40V platform) (vs IAUC120N06S5L011ATMA1 (OptiMOS 5))
Design Notes
Estimated: at ID=100 A continuous with RDS(on)=1.2 mΩ, the steady-state conduction loss is P = I² × R = 100² × 0.0012 = 12 W. The PG-TDSON-8 package has a typical junction-to-ambient thermal resistance of about 50 °C/W on a 1-square-inch 2 oz copper pour, which yields a junction temperature rise of 12 × 50 = 600 °C - well above the 175 °C limit. Therefore the PCB must be designed with at least 3-4 square inches of 2 oz copper on the drain tab, multiple thermal vias to inner-layer copper planes, and ideally an active airflow or a small heatsink. For 50 A continuous, the dissipation drops to 3 W and a 1 sq.in. copper pour is generally sufficient.
Minimise the source-loop and gate-loop inductance by placing the gate-drive components within 5 mm of the gate and source pins. Use a kelvin-source connection if the source pad is shared with the high-current path: route the gate-drive ground return directly to the source pin rather than to the system ground. The exposed drain pad must be soldered to a copper pour that extends at least 5 mm beyond the package edge on all sides, with a via array (0.3 mm drill, 0.6 mm pitch) to inner thermal planes. These layout practices reduce ringing, suppress dv/dt-induced false turn-on, and keep the MOSFET within its SOA.
Do not exceed VGS = ±20 V - even brief overshoots above 20 V can permanently damage the thin gate oxide of OptiMOS 6 parts. Add a 10 kΩ gate-to-source pull-down resistor to keep the MOSFET off during MCU reset or floating-GATE fault conditions. For half-bridge configurations, insert a small (1-5 Ω) gate resistor to damp the gate-drive loop LC resonance, but do not exceed 10 Ω or the switching loss will rise sharply. Finally, do not parallel two IAUC120N04S6L012ATMA1s without matched gate resistors and a shared gate-driver - the very low RDS(on) of 1.2 mΩ means even small VGS mismatch creates severe current imbalance during turn-on.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon product page. RoHS and REACH compliant. Lead-free and halogen-free per PG-TDSON-8 package materials declaration. Note: AEC-Q100 nomenclature is sometimes used interchangeably with AEC-Q101 for discrete semiconductors; this part is qualified to AEC-Q101 for discrete MOSFETs.
