IAUC120N04S6N010ATMA1 vs IAUC41N06S5N102ATMA1 Comparison

Detailed side-by-side comparison of IAUC120N04S6N010ATMA1 by Infineon and IAUC41N06S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Active

Specification Comparison

Parameter IAUC120N04S6N010ATMA1 IAUC41N06S5N102ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 40 V —
Continuous Drain Current (Id, Tc) 150 A —
Power Dissipation (Pd, Tc) 150 W —
RDS(on) at VGS=10V (typ) 1.0 mΩ —
RDS(on) at VGS=10V (max per LCSC excerpt) 1.03 mΩ —
Gate-Source Threshold (VGS(th), typ) 3 V (at 90 µA) —
Technology OptiMOS 6 —
Package PG-TDSON-8-34 (5x6 mm leadless) PG-TDSON-8-33 (SSO8) Surface Mount
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101 (per Infineon automotive MOSFET family)
Operating Temperature Range -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) -55C to +175C (junction)
MSL Level 1 (per JEDEC J-STD-020, per Infineon TDSON family) —
RoHS Status Compliant Compliant
Gate Drive Recommendation 10 V VGS for full RDS(on) spec —
Polarity Single N-channel —
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5 Power-Transistor
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 47 A (Tj)
Power Dissipation (PD, Tc=25C) — 42 W
On-Resistance (RDS(on)) — 10.2 mΩ at VGS=10 V, ID=20 A
Gate-Source Threshold (VGS(th)) — 3.4 V (typical)
Total Gate Charge (QG) — 12.5 nC
Channel Polarity — N-Channel (single)

Datasheets & Resources

Browse All Products Create BOM Request Quote