IAUC120N04S6N010ATMA1 vs IAUC41N06S5N102ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC120N04S6N010ATMA1 disebabkan oleh Infineon dan IAUC41N06S5N102ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ AktifInfineon
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC120N04S6N010ATMA1 | IAUC41N06S5N102ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 40 V | — |
| Continuous Drain Current (Id, Tc) | 150 A | — |
| Power Dissipation (Pd, Tc) | 150 W | — |
| RDS(on) at VGS=10V (typ) | 1.0 mΩ | — |
| RDS(on) at VGS=10V (max per LCSC excerpt) | 1.03 mΩ | — |
| Gate-Source Threshold (VGS(th), typ) | 3 V (at 90 µA) | — |
| Technology | OptiMOS 6 | — |
| Kemasan | PG-TDSON-8-34 (5x6 mm leadless) | PG-TDSON-8-33 (SSO8) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per Infineon automotive MOSFET family) |
| Gambaran Suhu Operasi | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) | -55C to +175C (junction) |
| Aras MSL | 1 (per JEDEC J-STD-020, per Infineon TDSON family) | — |
| Status RoHS | Compliant | Compliant |
| Gate Drive Recommendation | 10 V VGS for full RDS(on) spec | — |
| Polarity | Single N-channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 Power-Transistor |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 47 A (Tj) |
| Power Dissipation (PD, Tc=25C) | — | 42 W |
| On-Resistance (RDS(on)) | — | 10.2 mΩ at VGS=10 V, ID=20 A |
| Gate-Source Threshold (VGS(th)) | — | 3.4 V (typical) |
| Total Gate Charge (QG) | — | 12.5 nC |
| Channel Polarity | — | N-Channel (single) |