IAUC120N06S5L015ATMA1 vs IAUA210N10S5N024AUMA1 Comparison

Detailed side-by-side comparison of IAUC120N06S5L015ATMA1 by Infineon and IAUA210N10S5N024AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Active

Specification Comparison

Parameter IAUC120N06S5L015ATMA1 IAUA210N10S5N024AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.92 $1.65
Technology N-Channel MOSFET (OptiMOS 5) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc=25C) 235 A
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ
Gate Charge (Qg, typ) 88 nC
Power Dissipation (PD, Tc=25C) 167 W
Operating Temperature Range -55C to +175C (Tj) -55°C to +175°C (TJ)
Package PG-TDSON-8-43 (Surface Mount) PG-HSOF-5-4 (7×8 mm² sTOLL)
Mounting Type Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Gate-Source Voltage (VGS) max ±20 V
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A
Typical Application Automotive DC-DC, battery switches, motor drives
Manufacturer Infineon Technologies
Product Family OptiMOS 5
Continuous Drain Current (ID) @ Tj 210 A
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C 238 W
Lead-Free Yes
Avalanche Energy Rated Yes (per datasheet)

Datasheets & Resources

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