IAUC120N06S5L015ATMA1 vs IAUA210N10S5N024AUMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L015ATMA1 por Infineon y IAUA210N10S5N024AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoInfineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L015ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $1,65 |
| Technology | N-Channel MOSFET (OptiMOS 5) | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55°C to +175°C (TJ) |
| Encapsulado | PG-TDSON-8-43 (Surface Mount) | PG-HSOF-5-4 (7×8 mm² sTOLL) |
| Tipo de montaje | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) @ Tj | — | 210 A |
| Continuous Drain Current (ID) @ TC=25°C | — | [DATA_NEEDED: ID at TC=25°C] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25°C | — | 238 W |
| Lead-Free | — | Yes |
| Avalanche Energy Rated | — | Yes (per datasheet) |