IAUC120N06S5L015ATMA1 vs IAUA210N10S5N024AUMA1 比較

詳細並排比較 IAUC120N06S5L015ATMA1 由 Infineon 與 IAUA210N10S5N024AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 啟用中
Infineon
IAUA210N10S5N024AUMA1 IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon

IAUA210N10S5N024AUMA1 ✓ 啟用中

規格比較

參數 IAUC120N06S5L015ATMA1 IAUA210N10S5N024AUMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology N-Channel MOSFET (OptiMOS 5) MOSFET (Metal Oxide), N-Channel
Drain-Source Voltage (VDS) 60 V 100 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
工作溫度範圍 -55C to +175C (Tj) -55°C to +175°C (TJ)
封裝 PG-TDSON-8-43 (Surface Mount) PG-HSOF-5-4 (7×8 mm² sTOLL)
安裝類型 Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101
Gate-Source Voltage (VGS) max ±20 V —
RoHS 狀態 Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Continuous Drain Current (ID) @ Tj — 210 A
Continuous Drain Current (ID) @ TC=25°C — [DATA_NEEDED: ID at TC=25°C]
On-Resistance RDS(on) Max @ VGS=10V — 2.4 mΩ
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th) value]
Gate Charge Qg (typ) — [DATA_NEEDED: Qg typ @ VGS=10V]
Power Dissipation (PD) @ TC=25°C — 238 W
Lead-Free — Yes
Avalanche Energy Rated — Yes (per datasheet)

資料表與資源

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