IAUC120N06S5L015ATMA1 vs IAUA210N10S5N024AUMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N06S5L015ATMA1 par Infineon et IAUA210N10S5N024AUMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifInfineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC120N06S5L015ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $1,65 |
| Technology | N-Channel MOSFET (OptiMOS 5) | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Plage de température de fonctionnement | -55C to +175C (Tj) | -55°C to +175°C (TJ) |
| Boîtier | PG-TDSON-8-43 (Surface Mount) | PG-HSOF-5-4 (7×8 mm² sTOLL) |
| Type de montage | Surface Mount (exposed pad) | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) @ Tj | — | 210 A |
| Continuous Drain Current (ID) @ TC=25°C | — | [DATA_NEEDED: ID at TC=25°C] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25°C | — | 238 W |
| Lead-Free | — | Yes |
| Avalanche Energy Rated | — | Yes (per datasheet) |