IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon
MPN: IAUC120N06S5L011ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.05 | $30.50 |
| 100 | $2.71 | $271.00 |
| 500 | $2.38 | $1,190.00 |
| 1,000 | $2.1 | $2,100.00 |
Drop-in alternatives for IAUC120N06S5L011ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC120N06S5N011ATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC100N04S6L025ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →ISC080N10NM6ATMA1
✅ Drop-In✓ In Stock
$1.05 / Unit
View Datasheet →IAUC100N10S5N040ATMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IPB020N10N5LFATMA1
✅ Drop-In✓ In Stock
$2.62 / Unit
View Datasheet →IAUC120N06S5L011ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 60 V (S5 generation) |
| Polarity / Channel Type | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V |
| Continuous Drain Current (I_D) | 310 A (Tj), 120 A marketing |
| R_DS(on) max | 1.1 mΩ at V_GS = 10 V |
| Power Dissipation (P_D) | 188 W at T_C = 25 °C |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8-53 (TDSON-8 FL, 5 mm × 6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (EAS) |
IAUC120N06S5L011ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side power return) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Kelvin Source (SS) — Kelvin source connection for gate-drive return (must be tied to gate driver ground) |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Drain-sense — Drain sense / drain (internally bonded) |
| Pin 7 | Drain — Drain terminal |
| Pin 8 | Drain — Drain terminal |
Safe Operating Area (DC)
Typical Applications
IAUC120N06S5L011ATMA1 is suitable for 6 applications: 12V Automotive DC-DC Buck Converter High-Side Switch, 48V Mild-Hybrid DC-DC Boost Converter, Server 12V OR-ing and Hot-Swap Controller, Brushless DC Motor Drive Three-Phase Inverter, Battery Pack Protection and Disconnect FET, Industrial 24V/48V Solenoid and Relay Driver.
12V Automotive DC-DC Buck Converter High-Side Switch
The IAUC120N06S5L011ATMA1 is well-suited as the high-side switch in a 12 V to 3.3 V / 5 V synchronous buck converter for automotive infotainment and ADAS ECUs. With 1.1 mΩ R_DS(on) and 60 V drain-source rating, it tolerates load-dump transients up to 35 V on the 12 V bus while keeping conduction loss below 0.3 % at 30 A output. The PG-TDSON-8-53 footprint allows direct PCB drop-in for compact powertrain modules. AEC-Q101 qualification supports OEM PPAP and functional-safety documentation per ISO 26262. Designers typically pair it with a smaller low-side FET and a dedicated gate-driver IC such as the 1EDB7275FXUMA1 to optimize switching loss versus conduction loss in the 100 kHz to 1 MHz switching range.
Recommended
48V Mild-Hybrid DC-DC Boost Converter
In 48 V mild-hybrid powertrains, the IAUC120N06S5L011ATMA1 serves as the main switch in a boost converter that steps the 12 V battery up to 48 V for the integrated starter-generator. Its 60 V V_DS rating provides enough margin above the 48 V bus plus inductive ringing, while the 1.1 mΩ R_DS(on) minimizes conduction loss at the high currents typical of mild-hybrid systems (often 200 A peak). AEC-Q101 qualification is essential for safety-relevant powertrain loads. The OptiMOS 5 silicon offers low Qrr to limit body-diode reverse-recovery losses during continuous conduction mode. Use a heatsink or large copper pour because dissipation in a 48 V boost stage can reach 10-20 W under peak load.
Recommended
Server 12V OR-ing and Hot-Swap Controller
The IAUC120N06S5L011ATMA1 is a strong candidate for the OR-ing FET or hot-swap pass-FET in redundant 12 V server power distribution, where two or more PSU outputs are diode-OR'd to a common bus. Its 1.1 mΩ R_DS(on) at 60 V means far less power dissipation than a Schottky-diode OR-ing scheme - typically 1.4 W at 100 A versus 6 W for a dual-Schottky implementation. The PG-TDSON-8-53 footprint handles the thermal load when paired with proper copper pour. For telecom 48 V applications the 60 V rating still gives margin. Designers should add a gate-source Zener clamp and TVS across drain-source to protect against cable-inductance transients during hot-swap events.
Recommended
Brushless DC Motor Drive Three-Phase Inverter
In a three-phase BLDC inverter for automotive water pumps, oil pumps, electric power steering, or HVAC blowers, three IAUC120N06S5L011ATMA1 FETs form the low-side (or all-six) switch positions. The 1.1 mΩ R_DS(on) keeps I²R losses low at the 30-80 A phase currents typical of automotive auxiliary drives, and the 60 V V_DS comfortably handles back-EMF spikes from the motor inductance at 100 % PWM. OptiMOS 5's low gate charge and fast body-diode recovery reduce dead-time losses, which is critical for efficiency-sensitive EV range budgets. The PG-TDSON-8-53 footprint allows three FETs to fit on a compact inverter PCB next to the gate-driver such as the 6EDL04N02PRXUMA1.
Recommended
Battery Pack Protection and Disconnect FET
The IAUC120N06S5L011ATMA1 can be used as the primary disconnect / protection FET in a 12 V or 48 V lithium battery pack for e-scooters, e-bikes, mobility scooters, and small energy-storage systems. With 1.1 mΩ R_DS(on) and 310 A continuous drain rating, it carries full load and surge currents with minimal voltage drop, and the 60 V V_DS rating covers multi-cell 48 V stacks with comfortable margin. AEC-Q101 qualification supports OEM automotive-grade battery programs. The PG-TDSON-8-53 footprint dissipates heat from continuous 50-100 A loads when mounted to an adequate copper area on the BMS PCB. Designers typically place two of these in series (back-to-back) for true bidirectional isolation in the pack.
Recommended
Industrial 24V/48V Solenoid and Relay Driver
For industrial 24 V and 48 V solenoid, relay, and contactor drivers in PLCs, factory automation, and process-control equipment, the IAUC120N06S5L011ATMA1 functions as a low-side switch rated well above the bus voltage. Its 60 V V_DS handles the inductive kick of de-energizing large solenoids and mechanical relays - typically 1.5-2× the supply - without needing a separate flyback diode, because the body diode carries the freewheel current. The 1.1 mΩ R_DS(on) minimizes heat dissipation in continuous-duty industrial control panels. The PG-TDSON-8-53 footprint fits inside DIN-rail-mounted I/O modules. Per Infineon's datasheet, the part is UIL-tested, providing field-proven avalanche ruggedness for the harsh inductive-switching environment of factory floors.
Recommended
Recommended Products Summary
Engineering reference data for IAUC120N06S5L011ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N06S5N011ATMA1 | IAUC100N04S6L025ATMA1 | ISC080N10NM6ATMA1 | IAUC100N10S5N040ATMA1 | IPB020N10N5LFATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-53 (5x6 mm) | PG-TDSON-8-53 (5x6 mm) - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same | PG-TDSON-8-53 - same |
| V_DS max (V) | 60 | 60 (same) | 40 (lower) | 100 (higher) | 100 (higher) | 100 (higher) |
| R_DS(on) max (mΩ) at 10V | 1.1 | 1.6 (+45%) | 2.5 | 8.0 | 4.0 | 2.0 |
| Continuous I_D (A) at T_C | 310 | 310 (same) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| P_D max (W) at T_C=25C | 188 | 188 (same) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| AEC-Q101 Qualified | Yes | Yes (same) | Yes | Yes | Yes | Yes |
| Technology Generation | OptiMOS 5 (S5) | OptiMOS 5 (S5) - same | OptiMOS 5 (S6) | OptiMOS 5 (NM6) | OptiMOS 5 (S5) | OptiMOS 5 (N5) |
Key Differentiators
- Lower R_DS(on) in same package versus the N011 sister part (vs IAUC120N06S5N011ATMA1)
- Higher current density in same footprint than 100V class parts (vs ISC080N10NM6ATMA1)
- 60 V voltage class matches 48 V mild-hybrid system margin (vs IAUC100N04S6L025ATMA1)
Design Notes
Estimated: At 100 A continuous load and R_DS(on) of 1.1 mΩ (scaled to T_J = 100 °C via the typical 1.4× multiplier), steady-state power dissipation reaches approximately 15.4 W. The PG-TDSON-8-53 package has R_thJC of roughly 0.8 °C/W, giving a junction-to-case rise of 12 °C; without a dedicated heatsink the dominant thermal path is junction-to-PCB copper. Per Infineon's layout guideline, allocate at least 100 mm² of 2 oz copper on the top layer (and 100 mm² on the bottom) to keep R_thJA below 25 °C/W. Without this, the FET will throttle at high current because T_J approaches the 175 °C maximum.
Pin 4 of the PG-TDSON-8-53 package is a Kelvin source connection that must be tied to the gate-driver return, NOT directly to the power-source PCB trace. If pin 4 is shorted to the power-source node, the gate-driver return current flows through the package lead inductance (typically 1-3 nH) and C_gd coupling can cause parasitic turn-on, leading to cross-conduction shoot-through in half-bridge topologies. Keep the gate-drive loop (gate driver output to gate pin to Kelvin source pin back to gate-driver ground) to a few square millimeters. The Infineon PG-TDSON-8-53 application note provides a recommended footprint with a cut-out under the gate pin to maximize the Kelvin-source copper area.
Do not exceed the maximum gate-source voltage of ±20 V (per Infineon OptiMOS 5 datasheet family, exact value not in the provided data - verify against datasheet before final design). Add a 10 kΩ gate-source resistor to prevent floating-gate turn-on during hot-plug events. For paralleled FETs, add individual gate resistors (typically 10-47 Ω) to dampen oscillations between the paralleled gates. The exposed drain pad must be soldered - dry-soldered thermal pad can cause a 30 % rise in R_thJA and lead to thermal runaway. Always use the recommended solder paste stencil aperture (typically 1:1 with the pad) and reflow profile per JEDEC J-STD-020.
Switching the IAUC120N06S5L011ATMA1 at high dV/dt (above 5 kV/μs) can couple noise into adjacent signal traces through the drain-source capacitance. For motor-drive and inverter applications, route sensitive analog feedback (current-sense amplifier outputs, temperature sensors) at least 5 mm away from the drain node, or guard them with a ground trace. Place a small RC snubber (typically 10 Ω + 1 nF) across drain-source if the layout cannot control ringing below 50 V peak. The body-diode reverse-recovery behaviour of OptiMOS 5 is well-controlled, but at high di/dt (>500 A/μs) the user should verify against the published Qrr curve in the datasheet.
Compliance Information
AEC-Q101 (automotive) qualified per Infineon product page. RoHS and REACH compliance confirmed by Mouser/DigiKey distributor listings. Halogen-free status not explicitly stated in provided data - set to 'unknown'.
