IAUC120N06S5N017ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N017ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N017ATMA1
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΞ© OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N017ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 120 A | β |
| Pulsed Drain Current (IDM) | 757 A | β |
| RDS(on) at VGS=10V | 1.7 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | β |
| Input Capacitance (Ciss) | 6.952 nF | β |
| Reverse Transfer Capacitance (Crss) | 84 pF | β |
| Output Capacitance (Coss) | 1.507 nF | β |
| Power Dissipation (PD, Tc=25Β°C) | 167 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55 Β°C to +175 Β°C (TJ) |
| Package | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | β |
| MSL Level | MSL1 (260Β°C peak reflow) | MSL 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Green Product (RoHS compliant) | Compliant (per Infineon product page) |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Technology | β | Trench MOSFET, silicon |
| Short-Circuit Withstand | β | Yes (current-limited) |