IAUC120N06S5N017ATMA1 vs ISC011N04NM7VATMA1 Perbandingan

Perbandingan bersamaan detil IAUC120N06S5N017ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC120N06S5N017ATMA1 ISC011N04NM7VATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode N-Channel
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc=25°C) 120 A —
Pulsed Drain Current (IDM) 757 A —
RDS(on) at VGS=10V 1.7 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3.4 V (typ) —
Total Gate Charge (Qg) at VGS=10V 95.9 nC —
Input Capacitance (Ciss) 6.952 nF —
Reverse Transfer Capacitance (Crss) 84 pF —
Output Capacitance (Coss) 1.507 nF —
Power Dissipation (PD, Tc=25°C) 167 W —
Rentang Suhu Kerja -55°C to +175°C -55 °C to +175 °C (TJ)
Paket PG-TDSON-8-43 (TDSON-8 EP) PG-TDSON-8 (source-down)
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualification Yes (Automotive Grade) —
Level MSL MSL1 (260°C peak reflow) MSL 1 (per JEDEC J-STD-020)
RoHS Compliance Green Product (RoHS compliant) Compliant (per Infineon product page)
Product Family — OptiMOS 7 Power-Transistor
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
On-Resistance RDS(on) max @ VGS=10V — 1.1 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Technology — Trench MOSFET, silicon
Short-Circuit Withstand — Yes (current-limited)

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IAUC120N06S5N017ATMA1

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