IAUC41N06S5N102ATMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5N102ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.68 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 5 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | β |
| Power Dissipation (PD, Tc=25C) | 42 W | β |
| On-Resistance (RDS(on)) | 10.2 mΞ© at VGS=10 V, ID=20 A | β |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | β |
| Total Gate Charge (QG) | 12.5 nC | β |
| Package | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8-34 (5x6 mm leadless) |
| Operating Temperature Range | -55C to +175C (junction) | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Technology | β | OptiMOS 6 |
| MSL Level | β | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |