IAUC41N06S5N102ATMA1 vs IAUC120N04S6N010ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC41N06S5N102ATMA1 disebabkan oleh Infineon dan IAUC120N04S6N010ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N04S6N010ATMA1 IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon

IAUC120N04S6N010ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC41N06S5N102ATMA1 IAUC120N04S6N010ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Family OptiMOS 5 Power-Transistor —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Kemasan PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-34 (5x6 mm leadless)
Gambaran Suhu Operasi -55C to +175C (junction) -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
Status RoHS Compliant Compliant
Channel Polarity N-Channel (single) —
FET Type — N-Channel
Drain-Source Voltage (V(BR)DSS) — 40 V
Continuous Drain Current (Id, Tc) — 150 A
Power Dissipation (Pd, Tc) — 150 W
RDS(on) at VGS=10V (typ) — 1.0 mΩ
RDS(on) at VGS=10V (max per LCSC excerpt) — 1.03 mΩ
Gate-Source Threshold (VGS(th), typ) — 3 V (at 90 µA)
Technology — OptiMOS 6
Aras MSL — 1 (per JEDEC J-STD-020, per Infineon TDSON family)
Gate Drive Recommendation — 10 V VGS for full RDS(on) spec
Polarity — Single N-channel

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