IAUC41N06S5N102ATMA1 vs IAUC41N06S5L Comparison

Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUC41N06S5L by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC41N06S5N102ATMA1 IAUC41N06S5L
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Package PG-TDSON-8-33 (SSO8) Surface Mount TDSON-8 (PG-TDSON-8)
Operating Temperature Range -55C to +175C (junction) —
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
RoHS Status Compliant Compliant (Green Product)
Channel Polarity N-Channel (single) —
Part Number — IAUC41N06S5L
Technology — OptiMOS-5 trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>) — [DATA_NEEDED: I_D max value]
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V — 10 mΩ typical
R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — Logic-level (around 1.7 V typical)
Maximum Operating Junction Temperature — 175 °C
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
Channel Type — N-channel, Enhancement mode
Lead-Free — Yes
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS max absolute rating]

Datasheets & Resources

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