IAUC41N06S5N102ATMA1 vs IAUC41N06S5L Vergleich

Detaillierter Direktvergleich von IAUC41N06S5N102ATMA1 von Infineon und IAUC41N06S5L von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IAUC41N06S5N102ATMA1 IAUC41N06S5L
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,58 $0,78
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Gehäuse PG-TDSON-8-33 (SSO8) Surface Mount TDSON-8 (PG-TDSON-8)
Betriebstemperaturbereich -55C to +175C (junction) —
Montageart Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101
RoHS-Status Compliant Compliant (Green Product)
Channel Polarity N-Channel (single) —
Part Number — IAUC41N06S5L
Technology — OptiMOS-5 trench MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>) — [DATA_NEEDED: I_D max value]
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V — 10 mΩ typical
R<sub>DS(on)</sub> at V<sub>GS</sub>=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage (V<sub>GS(th)</sub>) — Logic-level (around 1.7 V typical)
Maximum Operating Junction Temperature — 175 °C
MSL (Moisture Sensitivity Level) — MSL1 (up to 260 °C peak reflow)
Channel Type — N-channel, Enhancement mode
Lead-Free — Yes
Gate-Source Voltage (V<sub>GS</sub>) max — [DATA_NEEDED: V_GS max absolute rating]

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