IAUC41N06S5N102ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUC41N06S5N102ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC41N06S5N102ATMA1
IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΞ© OptiMOS 5 N-FET | Infineon
IAUC41N06S5N102ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC41N06S5N102ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc) | 47 A (Tj) | β |
| Power Dissipation (PD, Tc=25C) | 42 W | β |
| On-Resistance (RDS(on)) | 10.2 mΞ© at VGS=10 V, ID=20 A | β |
| Gate-Source Threshold (VGS(th)) | 3.4 V (typical) | β |
| Total Gate Charge (QG) | 12.5 nC | β |
| Package | PG-TDSON-8-33 (SSO8) Surface Mount | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 (per Infineon automotive MOSFET family) | AEC-Q101 (per part number suffix) |
| RoHS Status | Compliant | Compliant |
| Channel Polarity | N-Channel (single) | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |