IAUC41N06S5N102ATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan

Perbandingan bersamaan detil IAUC41N06S5N102ATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC41N06S5N102ATMA1 IAUC60N04S6L030HATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
Paket PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Rentang Suhu Kerja -55C to +175C (junction) —
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101 (per part number suffix)
Status RoHS Compliant Compliant
Channel Polarity N-Channel (single) —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
Suhu Hubung Kerja — -55 C to +175 C
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

IAUC60N04S6L030HATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon