IAUC41N06S5N102ATMA1 vs IAUC60N04S6L030HATMA1 对比

详细并排对比 IAUC41N06S5N102ATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC41N06S5N102ATMA1 IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 - 60V 47A 10.2mΩ OptiMOS 5 N-FET | Infineon

IAUC41N06S5N102ATMA1 ✓ 量产中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中

规格对比

参数 IAUC41N06S5N102ATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.58 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 5 Power-Transistor —
晶体管类型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 40 V
Continuous Drain Current (ID, Tc) 47 A (Tj) —
Power Dissipation (PD, Tc=25C) 42 W —
On-Resistance (RDS(on)) 10.2 mΩ at VGS=10 V, ID=20 A —
Gate-Source Threshold (VGS(th)) 3.4 V (typical) —
Total Gate Charge (QG) 12.5 nC —
封装 PG-TDSON-8-33 (SSO8) Surface Mount PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
工作温度范围 -55C to +175C (junction) —
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per Infineon automotive MOSFET family) AEC-Q101 (per part number suffix)
RoHS 状态 Compliant Compliant
Channel Polarity N-Channel (single) —
Part Series — OptiMOS 6
Configuration — Half-Bridge (2 N-Channel)
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作结温 — -55 C to +175 C
MSL 等级 — 1 (per JEDEC J-STD-020)

数据手册与资源

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