IAUC50N08S5L096ATMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUC50N08S5L096ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Operating Temperature Range | -55°C to +175°C | -55C to +175C |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Series | — | OptiMOS 5 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Technology | — | Trench (OptiMOS 5) |
| Number of Pins | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |