IAUC50N08S5L096ATMA1 vs IAUC60N06S5L073ATMA1 比較
詳細並排比較 IAUC50N08S5L096ATMA1 由 Infineon 與 IAUC60N06S5L073ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUC50N08S5L096ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| 工作溫度範圍 | -55°C to +175°C | -55C to +175C |
| 封裝 | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Series | — | OptiMOS 5 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Technology | — | Trench (OptiMOS 5) |
| 腳位數 | — | 8 |
| Configuration | — | Single N-Channel |
| Qualification | — | AEC-Q101 automotive grade |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |