IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon
MPN: IAUC50N08S5L096ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
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View Datasheet →IAUC50N08S5L096ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 50 A (Tc) |
| Pulsed Drain Current (IDM) | 200 A |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A |
| Power Dissipation (PD) | 60 W (Tc) |
| Operating Temperature Range | -55°C to +175°C |
| Package | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
IAUC50N08S5L096ATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input (MOSFET gate terminal) |
| Pin 2 | Source — Source terminal (electrically connected to exposed pad) |
| Pin 3 | Source — Source terminal (electrically connected to exposed pad) |
| Pin 4 | Drain — Drain terminal (main power input) |
| Pin 5 | Source — Source sense pin (Kelvin connection) |
| Pin 6 | Source — Source sense pin (Kelvin connection) |
| Pin 7 | Source — Source terminal (electrically connected to exposed pad) |
| Pin 8 | Source — Source terminal (electrically connected to exposed pad) |
Safe Operating Area (SOA) - IAUC50N08S5L096ATMA1
Typical Applications
IAUC50N08S5L096ATMA1 is suitable for 6 applications: Automotive LED Lighting Drivers, BLDC Motor Control, 12V/24V DC-DC Converter Switch, Battery Protection and Hot-Swap, Solenoid and Relay Drivers, Industrial 24V Automation.
Automotive LED Lighting Drivers
The IAUC50N08S5L096ATMA1's 9.6 mΩ RDS(on) at VGS=10 V minimizes conduction losses in high-current LED string drivers, where 5-15 A continuous currents are common. Its 80 V VDS rating provides ample headroom above the 24 V automotive bus envelope including 35 V load-dump transients, while the AEC-Q101 qualification ensures reliability under hood and chassis thermal cycling. Placed as the high-side PWM switch in a buck-converter LED driver, it dissipates roughly I²R = 0.96 W at 10 A, allowing compact designs without active cooling.
Recommended
BLDC Motor Control
In brushless DC motor drive half-bridges, the IAUC50N08S5L096ATMA1's 50 A continuous drain current and 200 A pulsed rating easily handle inrush and stall currents typical of 12 V/24 V cooling fans, water pumps, and seat-adjustment motors. The OptiMOS 5 figure-of-merit reduces switching losses at 20-50 kHz PWM, improving inverter efficiency by 1-2% versus older generations. Mounted on a 1 oz copper pour of at least 200 mm², it sustains the 60 W TC rating during repetitive stall-recovery cycles.
Recommended
12V/24V DC-DC Converter Switch
As the main switch in a 24 V-to-12 V buck converter or as a synchronous rectifier, the IAUC50N08S5L096ATMA1's low Qg and low RDS(on) deliver high efficiency at 100-300 kHz switching frequencies. The 80 V rating accommodates 24 V bus transients, while the 5x6 mm footprint keeps the layout compact for high-density power-supply designs. Total conduction loss at 20 A output is approximately 4 W, manageable on a 4-layer PCB with thermal vias to inner-plane copper.
Recommended
Battery Protection and Hot-Swap
In 12 V/24 V battery management systems, the IAUC50N08S5L096ATMA1 serves as the disconnect switch on the high-side path. Its 9.6 mΩ RDS(on) keeps continuous conduction loss under 1 W at 10 A continuous load, while the 50 A rating supports inrush peaks during capacitive loads. The 175°C junction rating provides thermal margin during sustained overcurrent events, and the AEC-Q101 qualification matches the harsh underhood environment. Gate resistance controls dv/dt during turn-off to limit voltage overshoot.
Recommended
Solenoid and Relay Drivers
Automotive solenoid drivers for transmission shift valves, fuel injectors, and EV charging contactors benefit from the IAUC50N08S5L096ATMA1's 200 A pulsed current rating and avalanche-energy robustness. The 80 V rating withstands flyback transients from inductive loads when paired with a freewheeling diode or TVS clamp. With proper gate-drive circuitry, this part can switch solenoid currents of 20-30 A repeatedly without thermal runaway, supported by the 175°C maximum junction temperature.
Recommended
Industrial 24V Automation
In factory-automation PLCs and 24 V industrial bus systems, the IAUC50N08S5L096ATMA1's 80 V rating protects against the 24 V industrial transients per IEC 61131-2, while the 9.6 mΩ RDS(on) keeps efficiency high in continuous conduction. The OptiMOS 5 platform provides predictable switching performance for high-side PWM dimming of indicator LEDs and motor-control outputs. The AEC-Q101 qualification offers extended reliability beyond commercial-grade parts, suitable for industrial-environment temperature swings.
Recommended
Recommended Products Summary
Engineering reference data for IAUC50N08S5L096ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N08S5N043ATMA1 | IAUC60N06S5L073ATMA1 | IAUC90N10S5N062ATMA1 | IAUC80N04S6N036ATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same | PG-TDSON-8-33 (5x6 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 60 V | 100 V | 40 V |
| Continuous Drain Current (ID) | 50 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RDS(on) max @ VGS=10V | 9.6 mΩ | 4.3 mΩ | 7.3 mΩ | 6.2 mΩ | 3.6 mΩ |
| Power Dissipation (PD) | 60 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Series | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- 80V VDS provides voltage headroom above 24V automotive transients (vs IAUC60N06S5L073ATMA1)
- Higher continuous current rating in same footprint (vs ISC016N08NM8ATMA1)
- Lower RDS(on) at equivalent voltage rating than 100V alternatives (vs BSC265N10LSFGATMA1)
- OptiMOS 5 latest-generation performance (vs IAUC80N04S6N036ATMA1 (OptiMOS 6))
Design Notes
Estimated: at PD=5 W continuous drain-source dissipation in free air with the PG-TDSON-8-33 mounted on a 4-layer 1 oz copper 1 square-inch pad, RthJA is approximately 50 C/W, producing a junction temperature rise of 250°C above ambient. Without adequate copper the part will thermal-limit below its 60 W TC rating. Designers must provide at least 200 mm² of copper connected to the exposed pad, plus thermal vias to inner planes, to achieve reliable operation. The 175°C maximum junction rating provides headroom but does not substitute for proper heatsinking at sustained high dissipation.
Layout the gate-drive loop with the shortest possible trace between the gate-driver output and pin 1, with the gate return-source sense pins (5,6) used as the Kelvin reference for high-side applications. Place a 10-100 Ω gate resistor in series with the gate to dampen parasitic ringing and limit peak gate current during turn-on. Minimize source-inductance in the high-current path by using wide copper pours on multiple layers stitched with vias. The exposed pad must be soldered to a copper land of at least 5x6 mm with thermal vias for optimal heat transfer.
Common pitfalls when using the IAUC50N08S5L096ATMA1 include: (1) exceeding the maximum VGS rating, which is typically ±20 V - use a gate-drive clamp or TVS if transients exceed this; (2) ignoring avalanche-energy during inductive switching - add a freewheeling diode or TVS across drain-source; (3) under-driving the gate below 10 V which dramatically increases RDS(on) and dissipation; (4) omitting a sufficiently stiff gate-driver with sufficient peak current capability (>1 A) for fast switching. Review the datasheet absolute maximum ratings before finalizing the design.
For high-current switching applications, place the gate-driver IC within 10 mm of the MOSFET gate pin to minimize parasitic inductance in the gate loop. Use a 4-layer PCB with the second layer as a continuous ground plane stitched to the MOSFET source pad with multiple vias. The drain-source switching node should be routed with minimal loop area and shielded by adjacent ground copper to reduce EMI. Keep sensitive analog traces away from the switching node and consider a snubber network if ringing exceeds 20% of VDS during turn-off transients.
Compliance Information
AEC-Q101 qualified (automotive grade). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free. Conflict-minerals compliant per Infineon supply-chain disclosures.
