IAUC80N04S6N036ATMA1 - 40V 80A OptiMOS-6 N-MOSFET | Infineon
MPN: IAUC80N04S6N036ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.31 | $131.00 |
| 500 | $1.04 | $520.00 |
| 1,000 | $0.86 | $860.00 |
Drop-in alternatives for IAUC80N04S6N036ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC60N04S6N044ATMA1
✅ Drop-In✓ In Stock
$0.98 / Unit
View Datasheet →IAUC100N04S6L020ATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN04S6N009TATMA1
✅ Drop-In✓ In Stock
$1.71 / Unit
View Datasheet →IAUC64N08S5L075ATMA1
✅ Drop-In✓ In Stock
$0.58 / Unit
View Datasheet →BSC080N04LSGATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC80N04S6N036ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS-6 40 V |
| Polarity | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) at T_C | 80 A |
| Power Dissipation (P_D) at T_C | 50 W |
| On-Resistance R_DS(on) max at V_GS=10V | 3.6 mOhm |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C |
| AEC-Q101 Qualification | Qualified (Automotive) |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Tin (Sn) (e3 per JESD-609) |
| Peak Reflow Temperature | 260 C (per JEDEC J-STD-020) |
| Compliance - RoHS | Compliant |
| Compliance - REACH | Compliant |
IAUC80N04S6N036ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal (low-side connection) |
| Pin 3 | Source — Source terminal (low-side connection) |
| Pin 4 | Gate — Gate drive input (V_GS threshold ~1.7 V) |
| Pin 5 | Drain — Drain terminal (high-side connection) |
| Pin 6 | Drain — Drain terminal (high-side connection) |
| Pin 7 | Drain — Drain terminal (high-side connection) |
| Pin 8 | Drain — Drain terminal (high-side connection) |
Safe Operating Area (DC, T_C = 25 C)
Typical Applications
IAUC80N04S6N036ATMA1 is suitable for 7 applications: 12 V Automotive DC-DC Converter, Electric Power Steering (EPS) Motor Drive, Automotive Water/Oil Pump Driver, Battery Management System (BMS) Protection Switch, LED Headlight Driver / Matrix Lighting, Industrial 24 V Bus Hot-Swap / OR-ing, Cooling Fan Motor Drive (HVAC).
12 V Automotive DC-DC Converter
The IAUC80N04S6N036ATMA1 serves as the synchronous-rectifier low-side FET in 12 V-to-1.x V buck converters powering infotainment, ADAS ECUs, and cluster processors. Its 3.6 mOhm R_DS(on) at V_GS = 10 V keeps synchronous conduction losses below 0.3 W at 10 A output, while the 40 V V_DS rating tolerates automotive load-dump transients up to 35 V. The 5 mm x 6 mm PG-TDSON-8 footprint with top-side exposed pad fits converter layouts where the high-side FET and inductor occupy adjacent real estate. Compared to a Schottky-diode-rectified solution, this MOSFET typically improves light-load and full-load efficiency by 4-8%, reducing thermal stress on the overall power stage.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUC80N04S6N036ATMA1 is well suited for 12 V EPS half-bridge output stages that switch 60-100 A peak currents during steering-assist transients. Its 80 A continuous drain current and 50 W power dissipation cover peak-torque phase currents while AEC-Q101 qualification satisfies automotive functional-safety requirements. The 3.6 mOhm R_DS(on) keeps I-squared-R conduction loss at approximately 7 W per switch at 45 A peak - manageable with the PG-TDSON-8 thermal pad soldered to 1 oz copper with thermal vias. The compact 5x6 mm footprint supports integration inside the steering-column housing where PCB area is at a premium.
Recommended
Automotive Water/Oil Pump Driver
For 12 V brushed-PWM pump drives in thermal-management loops, the IAUC80N04S6N036ATMA1 handles 30-60 A PWM phase currents at 20 kHz switching frequency typical of automotive pump controllers. The OptiMOS-6 technology's low gate charge reduces driver losses in the high-side bootstrap path, while the 40 V V_DS margin tolerates inductive flyback transients from the motor winding. The PG-TDSON-8 package's 31 C/W junction-to-case thermal resistance allows sustained pump operation at 25 A without exceeding 125 C junction with proper PCB copper. AEC-Q101 grade supports under-hood operating temperatures from -40 C to +125 C.
Recommended
Battery Management System (BMS) Protection Switch
In 12 V lead-acid or Li-ion BMS packs, the IAUC80N04S6N036ATMA1 functions as the high-side or low-side disconnect switch carrying 80 A continuous charge/discharge currents. Its 3.6 mOhm R_DS(on) keeps full-load conduction loss at approximately 19 W at 80 A - requiring PCB copper pour and thermal vias to stay within thermal limits. The 40 V V_DS rating covers double-battery jump-start transients in commercial-vehicle applications. AEC-Q101 qualification and -55 C to +175 C junction temperature range suit underhood and chassis-mounted BMS modules.
Recommended
LED Headlight Driver / Matrix Lighting
In adaptive LED headlight matrix drivers, the IAUC80N04S6N036ATMA1 serves as the high-current pixel-switch FET controlling individual LED strings up to 80 A peak during PWM dimming cycles. The 3.6 mOhm R_DS(on) maintains PWM rise/fall times below 1 microsecond, supporting flicker-free dimming at 200 Hz-2 kHz. The 40 V V_DS rating provides margin above the 12 V automotive bus plus inductive ringing from the LED harness. PG-TDSON-8's small footprint supports dense multi-channel matrix layouts, and AEC-Q101 qualification ensures photometric stability across vehicle lifetime.
Recommended
Industrial 24 V Bus Hot-Swap / OR-ing
In industrial 24 V bus systems, the IAUC80N04S6N036ATMA1 acts as the OR-ing FET between redundant 24 V power feeds, blocking reverse current flow when one source drops. The 40 V V_DS rating provides ~16 V of margin above the 24 V nominal bus - sufficient for typical industrial transients. The 3.6 mOhm R_DS(on) keeps OR-ing conduction loss below 0.3 W at 10 A load, and the AEC-Q101 qualification extends reliability margins to industrial-grade temperature ranges. Although AEC-qualified, the part is widely used outside automotive due to its robust SOA performance.
Recommended
Cooling Fan Motor Drive (HVAC)
The IAUC80N04S6N036ATMA1 fits as the low-side FET in brushed or BLDC HVAC cooling-fan motor drives up to 60 A peak. Its OptiMOS-6 gate-charge profile supports 25 kHz PWM frequencies, enabling quieter acoustic performance than older OptiMOS generations at the same switching loss. The 40 V V_DS rating covers 12 V supply plus inductive spike transients, and the small PG-TDSON-8 footprint suits the fan's onboard motor-control PCB. AEC-Q101 grade supports integration into HVAC modules located in the engine compartment where ambient temperatures reach 105 C.
Recommended
Recommended Products Summary
Engineering reference data for IAUC80N04S6N036ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC60N04S6N044ATMA1 | IAUC100N04S6L020ATMA1 | IAUCN04S6N009TATMA1 | IAUC64N08S5L075ATMA1 | BSC080N04LSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same | PG-TDSON-8 (SuperSO8 5x6 mm) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 40 V | 40 V | 80 V | 40 V |
| Continuous Drain Current (I_D) | 80 A | 60 A (-25%) | 100 A (+25%) | [DATA_NEEDED] | 64 A (-20%) | [DATA_NEEDED] |
| R_DS(on) max at V_GS=10V | 3.6 mOhm | 4.4 mOhm (+22%) | 2.0 mOhm (-44%) | 0.9 mOhm (-75%) | 7.5 mOhm (+108%) | 8.0 mOhm (+122%) |
| Power Dissipation (P_D) | 50 W | 50 W | 50 W | [DATA_NEEDED] | 50 W | [DATA_NEEDED] |
| Technology Generation | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-6 | OptiMOS-5 | OptiMOS (legacy) |
| AEC-Q101 Qualified | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest R_DS(on) in 80 A OptiMOS-6 40 V class (vs IAUC60N04S6N044ATMA1)
- Higher current rating than same-package 40 V alternatives (vs IAUC64N08S5L075ATMA1)
- OptiMOS-6 generation gate-charge improvement (vs BSC080N04LSGATMA1)
Design Notes
Estimated: at I_D = 80 A and R_DS(on) = 3.6 mOhm (worst-case, T_J = 150 C), conduction loss is approximately P = I^2 x R = 6400 x 0.0036 = 23 W. The PG-TDSON-8 package has a junction-to-ambient thermal resistance of approximately 50 C/W on a 1 oz copper 1 sq-inch pad with thermal vias. Junction temperature rise = 23 W x 50 C/W = 1150 C above ambient - far exceeding 175 C limit, so continuous 80 A operation requires substantial copper pours (>=2 sq inch), multiple thermal vias, or forced airflow. Practical sustained current at 25 C ambient is typically 40-50 A.
Place the PG-TDSON-8 exposed pad on a continuous copper pour with at least 4 thermal vias (0.3 mm diameter) directly under the pad to minimize junction-to-ambient thermal resistance. Use wide, short gate-drive traces (<= 5 mm) and place the gate-driver IC within 10 mm of the gate pin to limit gate-loop inductance. A 10 Ohm gate-source resistor close to the gate pin prevents parasitic turn-on from drain-to-gate Miller coupling during fast V_DS transitions.
Do not exceed V_GS = +/-20 V (per OptiMOS-6 datasheet rating); gate-drive voltages above 12 V are acceptable but require careful dv/dt control to avoid ringing. The PG-TDSON-8 source pins (1-3) and drain pins (5-8) must be solidly bonded to copper planes for both current carrying and thermal dissipation - cold-solder joints on the exposed pad dramatically reduce thermal performance. During PCB assembly, follow JEDEC J-STD-020 MSL-1 handling - this part is moisture-insensitive but peak reflow must stay <= 260 C for <= 30 s.
Minimize the high-current source-inductance loop area between the MOSFET source pins, the gate-driver ground return, and the decoupling capacitors. Use a Kelvin connection for the gate-drive return path: route the gate-driver ground separately from the source-sensing trace so that high di/dt in the source loop does not inject voltage into the gate. The exposed pad must be soldered to a continuous ground/power plane - do not split the pad with thermal relief spokes, as this increases inductance and reduces thermal conductivity.
Compliance Information
AEC-Q101 (automotive) qualified per Arrow and TME distributor listings identifying this part as 'Automotive AEC-Q101'. RoHS compliant and lead-free per JEDEC JESD-609 e3 (Tin terminal finish). Halogen-free status not explicitly confirmed in the verified web data.
