IAUC90N10S5N062ATMA1 vs BSC0906NSATMA1 Comparison

Detailed side-by-side comparison of IAUC90N10S5N062ATMA1 by Infineon and BSC0906NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUC90N10S5N062ATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 90 A —
Maximum On-Resistance RDS(on) max at VGS=10V 6.2 mOhm —
Gate-Source Threshold Voltage VGS(th) typ 3.8 V —
Maximum Power Dissipation (Tc=25C) 115 W —
Operating Junction Temperature -55 C to +175 C —
Package PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-6 (SuperSO8, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology Trench MOSFET (OptiMOS 5, Generation 5) OptiMOS
Avalanche Rated Yes (100% avalanche tested) —
MSL (Moisture Sensitivity Level) MSL1 (260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
RoHS / Green Product Yes (RoHS compliant, Green Product) —
Lead-Free Yes —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]
Operating Temperature Range — -55C to +150C (junction, typical)
Pin Count — 8
RoHS Status — Compliant

Datasheets & Resources

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