IAUCN04S6N013TATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S6N013TATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S6N013TATMA1
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S6N013TATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.66 | $0.89 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | β |
| Continuous Drain Current (I<sub>D</sub>) | 230 A at T<sub>C</sub> | β |
| R<sub>DS(on)</sub> (max) | 1.32 mΞ© at V<sub>GS</sub> = 10 V | β |
| Power Dissipation (P<sub>D</sub>) | 133 W at T<sub>C</sub> | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.6 V (typ) | β |
| Total Gate Charge (Q<sub>g</sub>) | 52 nC at V<sub>GS</sub> = 10 V | β |
| Input Capacitance (C<sub>iss</sub>) | 1.08 nF | β |
| Output Capacitance (C<sub>oss</sub>) | 3.7 nF | β |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 51 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-LHDSO-10-1 (SSO10T) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 7 |
| Technology | β | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Operating Temperature Range | β | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |