IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
MPN: IAUCN04S7N037GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.89 | $2,670.00 |
Drop-in alternatives for IAUCN04S7N037GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7N027GATMA1
✅ Drop-In✓ In Stock
$0.72 / Unit
View Datasheet →IAUCN04S7N019GATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IAUCN04S7L042GATMA1
✅ Drop-In✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN04S7L050HATMA1
✅ Drop-In✓ In Stock
$0.83 / Unit
View Datasheet →IAUCN04S7N015GATMA1
✅ Drop-In✓ In Stock
$2.21 / Unit
View Datasheet →IAUCN04S7N037GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Technology | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | 57 W |
| Package | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount (IMS substrate attach compatible) |
| Channel Type | N-Channel |
| Operating Mode | Enhancement |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
IAUCN04S7N037GATMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Source — Source terminal (low-side return) |
| Pin 3 | Source — Source terminal (low-side return) |
| Pin 4 | Drain — Drain terminal via exposed pad (package bottom) |
Safe Operating Area
Typical Applications
IAUCN04S7N037GATMA1 is suitable for 6 applications: 12V Automotive ECU Power Distribution, Electric Power Steering (EPS) Motor Drive, 48V Mild-Hybrid DC-DC Converter, Battery Management System (BMS) Protection, Braking System Controller (ESC/ABS), High-Current Motor Drive Half-Bridge.
12V Automotive ECU Power Distribution
The IAUCN04S7N037GATMA1 is purpose-built for 12 V automotive ECU power switching where 40 V VDS provides sufficient margin for 24 V jump-start transients and load-dump events per ISO 7637-2. Its 91 A continuous drain current and 3.65 mΩ RDS(on) at VGS = 10 V enable efficient high-side load switches for body control modules, lighting drivers, and accessory power rails. The SSO4G 5x6 mm² footprint with exposed drain pad attaches directly to IMS substrates, achieving thermal resistance low enough for sustained 30-50 A loads without external heatsinks. AEC-Q101 qualification ensures reliability under -40 °C to +150 °C automotive temperature profiles.
Recommended
Electric Power Steering (EPS) Motor Drive
Electric power steering systems require MOSFETs that combine low RDS(on) for efficiency, AEC-Q101 reliability, and compact packaging for in-cabin mounting. The IAUCN04S7N037GATMA1 at 3.65 mΩ RDS(on) and 91 A ID handles the peak currents demanded during parking maneuvers, while its OptiMOS 7 trench technology minimizes switching losses at the 20-50 kHz PWM frequencies typical of EPS inverter stages. The SSO4G package's exposed pad enables direct bond to chassis-grounded heat spreaders, addressing the strict EMI and thermal constraints of column-assist EPS units where space and weight are at a premium.
Recommended
48V Mild-Hybrid DC-DC Converter
In 48 V mild-hybrid powertrains, the IAUCN04S7N037GATMA1 serves as the synchronous rectifier or high-side switch in buck/boost converters interfacing 48 V to 12 V domains. Although VDS = 40 V requires a derating-aware topology for 48 V rails, the part excels in 12 V downstream conversion stages and in 24 V systems found in commercial vehicles. Its 57 W power dissipation rating and SSO4G IMS-attach footprint deliver the thermal headroom needed for continuous 30-60 A operation in DC-DC stages. Low Qg and Qgd reduce switching losses at the 100-200 kHz frequencies common in modern automotive SMPS designs.
Recommended
Battery Management System (BMS) Protection
The IAUCN04S7N037GATMA1 functions as a low-loss disconnect/ protection element in 12 V and 24 V battery management systems. Its 91 A continuous rating covers nearly all passenger-vehicle cranking battery topologies, while 3.65 mΩ RDS(on) keeps conduction loss below 1 W at 20 A continuous discharge - critical for sleep-current-sensitive applications. AEC-Q101 qualification provides the reliability margin BMS designs demand for safety-critical overcurrent and reverse-polarity protection paths. The SSO4G 5x6 mm² package fits within the dense BMS PCB layouts common in start-stop and micro-hybrid vehicles.
Recommended
Braking System Controller (ESC/ABS)
Electronic stability control and anti-lock braking systems demand MOSFETs with proven reliability under harsh thermal-cycling and vibration conditions. The IAUCN04S7N037GATMA1 meets these requirements through AEC-Q101 qualification and OptiMOS 7 trench ruggedness, handling solenoid and pump-motor drive currents in the 10-40 A range typical of ESC modulator valves. Its low RDS(on) reduces I²R losses during active braking events, where hundreds of millijoules per actuation accumulate quickly. The SSO4G IMS-attach footprint enables direct thermal coupling to the ESC's aluminum chassis, supporting long-term reliability in safety-critical brake-by-wire applications.
Recommended
High-Current Motor Drive Half-Bridge
In automotive brushed and brushless DC motor inverters, the IAUCN04S7N037GATMA1 serves as either the high-side or low-side switch in a half-bridge configuration. Its 91 A rating covers most 12 V automotive auxiliary motors (fuel pumps, coolant pumps, HVAC blowers, windshield wiper drives) operating at 15-40 A continuous. The 3.65 mΩ RDS(on) paired with low Qg minimizes both conduction and switching losses, supporting the higher PWM frequencies that reduce motor acoustic noise. The SSO4G footprint allows compact half-bridge layouts with minimal parasitic inductance, critical for clean switching waveforms at 20-50 kHz PWM.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N037GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N027GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|---|
| Package | SSO4G 5x6 mm² (PG-THSOG-4-1) | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typical at VGS=10V | 3.65 mΩ | ~2.7 mΩ (lower) | ~1.9 mΩ (lower) | ~4.2 mΩ (slightly higher) | ~5.0 mΩ (higher) | ~1.5 mΩ (lowest) |
| Continuous Drain Current (ID) | 91 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (PD) at Tc | 57 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Unit Price (qty 1, as of 2026-09-14) | ~$1.85 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Optimized RDS(on) for 30-60 A continuous load range (vs IAUCN04S7N027GATMA1)
- Lower RDS(on) than L-series variants (vs IAUCN04S7L042GATMA1)
- IMS substrate attach optimized (vs DPAK alternatives)
Design Notes
Estimated: At ID = 30 A continuous and RDS(on) = 3.65 mΩ, conduction loss is approximately 3.3 W. Using the SSO4G 5x6 mm² package on an IMS substrate with typical RthJA of 25-40 °C/W (substrate-dependent), the junction temperature rise is 80-130 °C above ambient. For ambient temperatures up to 85 °C, this keeps Tj below 150-175 °C - verify with substrate-specific thermal characterization for your PCB stack-up. The exposed drain pad MUST be soldered to the IMS dielectric layer for rated thermal performance.
Minimize parasitic source inductance by placing the gate driver return path directly adjacent to the source pin (pin 2/3). Keep the gate loop area under 5 mm² to suppress VGS ringing during fast switching transitions. For half-bridge configurations, use a top-side layout that places high-side and low-side sources on adjacent pads to minimize high-side ground bounce. Place a 100 nF ceramic bypass capacitor within 2 mm of VCC on the gate driver IC.
Ensure VGS drive voltage reaches at least 10 V to fully enhance the MOSFET and achieve the rated 3.65 mΩ RDS(on). Below 8 V, RDS(on) increases dramatically (perhaps 2x or more), causing excessive conduction loss and possible thermal runaway. Do not exceed VGS = ±20 V absolute maximum - many gate driver ICs include a 12 V or 15 V clamp for protection. Verify ISO 7637-2 transient immunity in the final ECU design.
Compliance Information
AEC-Q101 automotive qualified per Infineon product page ('IAUC' prefix indicates automotive grade OptiMOS 7 family). RoHS and REACH compliant per distributor listings.
