IAUCN04S7L009ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L009ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L009ATMA1
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L009ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOSβ’ 7 (trench-gate) | β |
| Drain-Source Voltage (Vdss) | 40 V | β |
| Continuous Drain Current (Id, Tc=25Β°C) | 275 A (Tj) | β |
| Continuous Drain Current (Id, Tc=100Β°C) | 175 A | β |
| Power Dissipation (Pd, Tc=25Β°C) | 129 W | β |
| Rds(on) Max @ Vgs=10V | 0.91 mΞ© | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | β |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |