IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
MPN: IAUCN04S7L009ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.96 | $960.00 |
IAUCN04S7L009ATMA1 Overview
An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device in which a positive gate-to-source voltage creates a conductive channel between drain and source. The "N-channel" designation means the conducting carriers are electrons, which provide higher mobility than holes and therefore lower on-resistance per unit silicon area. Automotive MOSFETs like the IAUCN04S7L009 belong to the discrete-semiconductor family, specifically the power-MOSFET subcategory, and serve as the active switching element in motor drives, DC/DC converters, and load switches within the broader power-management IC ecosystem.
Key features include an extremely low typical Rds(on) of 0.91 mΩ, 175 A continuous drain current rating at the case, AEC-Q101 automotive qualification, and a logic-level gate drive compatible with 10 V. The OptiMOS™ 7 process technology uses a trench-gate structure with an advanced epitaxial layer that simultaneously reduces both conduction and switching losses, enabling higher power density and improved thermal behavior compared to previous generations.
The PG-TDSON-8-34 package provides an exposed-drain thermal pad (theta_JA approximately 50 C/W on 1 in² copper, 2 oz) that is critical for dissipating the 129 W rated power. This makes the part well-suited for high-current BLDC motor drives, 12 V/24 V automotive e-fuses, battery management protection, and synchronous rectification in 48 V systems. The automotive qualification per AEC-Q101 confirms reliability for under-the-hood environments with operating junction temperatures up to 175 °C.
Typical applications include automotive BLDC motor drives (cooling fans, water pumps, EPS), 12 V high-current load switches, DC/DC converter synchronous rectifiers, and battery protection in 12 V/48 V mild-hybrid systems. The wide SOA and low thermal impedance make the part ideal for repetitive hard-switching events in motor control.
When designing with this device, ensure sufficient copper area on the PCB to keep junction temperature within the 175 °C maximum rating - the 0.91 mΩ Rds(on) still dissipates significant power at 200 A+ transients. Use a 10 V gate drive for full enhancement and minimize gate-loop inductance to control switching spikes above the 40 V Vdss limit.
This page synthesizes Infineon distributor pricing, AEC-Q101-qualified drop-in alternatives from the Site MPN list, and practical thermal/SOA design notes beyond what is summarized on the manufacturer datasheet front page.
Drop-in alternatives for IAUCN04S7L009ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7L009ATMA1 (same form factor and footprint) — differing in Package, Automotive Qualification, Technology, Mounting Type, MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7L042GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.86 / Unit
View Datasheet →IAUCN04S7L050HATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.83 / Unit
View Datasheet →IAUCN04S7N037GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.89 / Unit
View Datasheet →IAUCN04S7N027GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.72 / Unit
View Datasheet →IAUCN04S7N019GATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.82 / Unit
View Datasheet →IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IAUCN04S7L009ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IAUCN04S7L009ATMA1 |
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | 175 A |
| Power Dissipation (Pd, Tc=25°C) | 129 W |
| Rds(on) Max @ Vgs=10V | 0.91 mΩ |
| Package | PG-TDSON-8-34 (TDSON EP) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +175 °C (Tj) |
| Automotive Qualification | AEC-Q101 qualified |
| MSL Level | 1 |
| RoHS Status | Compliant |
IAUCN04S7L009ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side connection) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Drain — Drain terminal (also exposed thermal pad) |
Safe Operating Area (DC, Tj=175°C)
Typical Applications
IAUCN04S7L009ATMA1 is suitable for 6 applications: 12V Automotive BLDC Motor Drive, Electric Power Steering (EPS) Motor Drive, 12V High-Current Load Switch / eFuse, Synchronous Rectification in 24V DC/DC Converters, Battery Management System (BMS) Protection Switch, Industrial 24V Brushless DC Motor Drive.
12V Automotive BLDC Motor Drive
The IAUCN04S7L009ATMA1 is well-matched to 12V automotive BLDC motor drives such as cooling fans, water pumps, and electric oil pumps because its 0.91 mΩ Rds(on) at 10 V Vgs keeps conduction losses under 1 W at 100 A continuous phase current - a critical thermal-budget constraint in sealed under-hood enclosures. The 40 V Vdss rating comfortably exceeds 12 V battery transients (including 24 V jump-start events up to 18 V), while AEC-Q101 qualification and 175 °C Tj rating confirm reliability across -40 °C to +125 °C under-hood ambient. The PG-TDSON-8-34 exposed pad delivers sub-1 °C/W junction-to-case thermal resistance on 1 in² 2-oz copper, eliminating external heatsinks in fan form factors. Use the part in the low-side or high-side position of a three-phase inverter driven by a gate driver such as the 2EDL8034G4CXTMA1 or IRS21867STRPBF.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUCN04S7L009ATMA1 fits EPS motor drive half-bridges where high peak torque demands translate to 200-300 A phase transients for tens of milliseconds. Its 275 A continuous Tj-rated current capability provides ample margin for the 3× overload conditions typical of EPS during parking maneuvers. The AEC-Q101 qualification, 175 °C Tj maximum, and ultra-low 0.91 mΩ Rds(on) collectively minimize torque ripple caused by Rds(on) mismatch between the high-side and low-side FETs of the half-bridge. The TDSON-8-34 exposed pad supports the high pulse power dissipation typical of EPS torque-assist events. Use the part with a fault-tolerant gate driver such as the TLE42062GXUMA2 and current-sense amplifier to meet ASIL-D functional safety requirements.
Recommended
12V High-Current Load Switch / eFuse
The IAUCN04S7L009ATMA1 serves as the active switch element in 12V electronic fuse (eFuse) modules replacing traditional thermal fuses and mechanical circuit breakers in automotive body controllers. At 200 A trip current with 0.91 mΩ Rds(on), steady-state dissipation is approximately 36 W - requiring careful thermal design but feasible in a TDSON-8-34 with adequate copper. The 40 V Vdss handles 24V jump-start transients and load-dump events up to 35 V when paired with a TVS clamp. The part's 175 °C Tj max and AEC-Q101 qualification are essential for in-cabin fuse boxes that must operate reliably over the vehicle's 15-year service life. Pair with the BTS710336ESAXUMA1 smart high-side switch for low-current branches and the BTS51202EKAXUMA1 for protected secondary rails.
Recommended
Synchronous Rectification in 24V DC/DC Converters
The IAUCN04S7L009ATMA1 is suitable for the synchronous rectifier position in 24V-to-12V or 24V-to-5V buck converters used in truck and industrial-vehicle power systems. Its 0.91 mΩ Rds(on) at 10 V Vgs reduces rectification loss compared to a Schottky diode by a factor of 3-5×, improving converter efficiency by 2-4 percentage points at full load. The 40 V Vdss provides adequate margin for 24V bus transients (typically 36 V max in 24V systems), while the 129 W power dissipation rating supports continuous 50-80 A output currents. The PG-TDSON-8-34 exposed pad allows direct PCB cooling without a separate heatsink in 1/16 brick or 1/8 brick converter footprints. Combine with the TLD5097EPXUMA1 buck controller or the TLE95613QXXUMA1 multi-rail PMIC.
Recommended
Battery Management System (BMS) Protection Switch
The IAUCN04S7L009ATMA1 functions as the main protection disconnect switch in 12V/24V automotive BMS modules, where it must interrupt fault currents up to 1000 A within microseconds. Its 275 A continuous and ~1500 A pulsed capability (within SOA limits) provide ample headroom for short-circuit interruption in pre-charge and main contactor-replacement applications. The 0.91 mΩ Rds(on) minimizes the I²R loss in the always-on discharge path, extending electric-vehicle range by tens of watt-hours over the vehicle lifetime. AEC-Q101 and 175 °C Tj max are mandatory for the underbody or rear-axle BMS enclosure environment. Pair with the TLF44773LAXUMA1 or TLS810B1LDV50XUMA1 BMS supply ICs and isolated gate drivers for high-side disconnect.
Recommended
Industrial 24V Brushless DC Motor Drive
The IAUCN04S7L009ATMA1 is applicable to industrial 24V BLDC motor drives used in conveyor systems, robotic actuators, and AGV wheel motors where 40 V Vdss provides headroom for 24V bus transients and regen events. At continuous 50-80 A phase currents typical of 1-2 kW industrial drives, the 0.91 mΩ Rds(on) keeps per-FET conduction loss under 6 W, manageable with the TDSON-8-34 exposed pad on 2 oz copper. The part's 175 °C Tj max supports industrial ambient temperatures up to 85 °C with adequate derating. While the part is AEC-Q101 qualified (a more demanding spec than industrial-only), this provides extra reliability margin in factory-floor applications. Pair with industrial-grade gate drivers such as the 2EDL6014ACG2DXTMA1 or 2EDN7434RXTMA1.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7L009ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7N027GATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) |
| Drain-Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V | 40 V | 60 V |
| Rds(on) max @ Vgs=10V | 0.91 mΩ | 1.04 mΩ (+14%) | 0.50 mΩ (-45%) | 0.37 mΩ (-59%) | 0.27 mΩ (-70%) | 0.30 mΩ (-67%) |
| Technology | OptiMOS™ 7 | OptiMOS™ 7 | OptiMOS™ 7 | OptiMOS™ 7 | OptiMOS™ 7 | OptiMOS™ 5/6 |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Key Differentiators
- Best Rds(on)/price ratio in 40V TDSON-8-34 family (vs IAUCN04S7L042GATMA1)
- Higher voltage margin than same-footprint 40V parts (vs IAUC60N04S6L030HATMA1)
- Optimized for low-frequency high-current (L-series) vs high-frequency switching (N-series) (vs IAUCN04S7N037GATMA1)
Design Notes
At 200 A continuous current with 0.91 mΩ Rds(on), conduction loss is approximately 36 W - the dominant heat source in most applications. The PG-TDSON-8-34 package requires a minimum of 1 in² 2-oz copper pour to keep junction-to-ambient thermal resistance below 50 °C/W, which translates to a 1800 °C junction temperature rise above 25 °C ambient if not properly cooled. Estimated: with 1 in² copper, 2 oz, no airflow, theta_JA ≈ 50 °C/W; with 200 LFM airflow, theta_JA drops to approximately 30 °C/W. For sustained operation above 150 A, add active cooling or parallel multiple FETs to stay within the 175 °C Tj limit.
Place the IAUCN04S7L009ATMA1 with its exposed drain pad directly over a continuous copper pour on the top and inner PCB layers - stitch with at least 9 thermal vias (0.3 mm drill, 1 mm pitch) to inner-layer copper planes. Minimize the source-gate and source-drain loop areas by routing the gate drive return directly over the source pins (pins 1-3 or 5-7) to limit parasitic inductance below 5 nH. This reduces switching transients and dv/dt-induced false turn-on, which can otherwise exceed the 40 V Vdss rating during 24 V load-dump events. Use 4-layer FR4 with 2-oz copper on outer layers for production designs.
Do not operate the IAUCN04S7L009ATMA1 below its fully-enhanced gate threshold - Vgs(th) is typically 2-3 V, and Rds(on) is specified at Vgs=10 V. Driving the part at Vgs=4.5 V (logic-level) can triple the effective Rds(on) and double conduction loss. Also avoid exceeding the 40 V Vdss rating during switching transients: the diode-recovery dv/dt of the complementary FET in a half-bridge can briefly exceed Vdss even at 24 V nominal bus, so a TVS clamp or RC snubber across the drain-source is recommended. Finally, derate continuous current to 175 A at 100 °C case per datasheet rather than using the 275 A 25 °C figure for thermal-budget calculations.
Keep the gate-drive trace shorter than 25 mm and route it over an unbroken ground plane to minimize parasitic inductance. Add a 10 Ω gate-source resistor and a 100 kΩ pull-down on the gate to prevent floating-gate turn-on during MCU reset or hot-plug events. For paralleled-FET designs, place source-sense resistors in each FET's source path and use kelvin-source connections to the gate driver to ensure current sharing within ±15 %. Layout symmetry between paralleled FETs is critical - asymmetric gate inductance causes current imbalance that can push one FET outside its SOA during hard-switching events.
Compliance Information
AEC-Q101 qualified per Infineon product page. RoHS and REACH compliant per distributor datasheet links. Halogen-free per MSL-1 classification.
