IAUCN04S7L019ATMA1 vs BSC027N04LSGATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and BSC027N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7L019ATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.48 $0.54
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7
FET Type N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V
Continuous Drain Current (I<sub>D</sub>) 120 A
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value]
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value]
Package PG-TDSON-8-33 PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C to +175°C (junction)
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C]
Thermal Resistance Junction-to-Ambient [DATA_NEEDED: RthJA value]
Automotive Qualification AEC-Q101 qualified
RoHS Status Compliant Compliant
MSL Level 1 1
Packaging Tape & Reel (13-inch reel)
Standard Pack Quantity 5000 pieces
Ordering Code Suffix ATMA1 (Tape & Reel 13")
Product Family OptiMOS 3
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) max ±20 V
Continuous Drain Current (ID) at Ta=25°C 24 A
Continuous Drain Current (ID) at Tc=25°C 100 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 2.7 mΩ
Power Dissipation (Ta=25°C) 2.5 W
Power Dissipation (Tc=25°C) 83 W
Operating Temperature Range -55°C to +150°C
Technology OptiMOS 3 (Trench)
Halogen-Free Yes

Datasheets & Resources

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