IAUCN04S7L019ATMA1 vs BSC027N04LSGATMA1 比較

詳細並排比較 IAUCN04S7L019ATMA1 由 Infineon 與 BSC027N04LSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L019ATMA1 BSC027N04LSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
FET Type N-Channel —
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封裝 PG-TDSON-8-33 PG-TDSON-8-1 (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
熱阻,接面至環境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
RoHS 狀態 Compliant Compliant
MSL 等級 1 1
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Product Family — OptiMOS 3
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
功率耗散 (TC=25°C) — 83 W
工作溫度範圍 — -55°C to +150°C
Technology — OptiMOS 3 (Trench)
無鹵素 — Yes

資料表與資源

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