IAUCN04S7L028ATMA1 vs IAUCN04S7N027GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L028ATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L028ATMA1
IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L028ATMA1 β ActiveInfineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L028ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 100 A | β |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | β |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | β |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | β |
| Gate Charge (Qg) | 24 nC at VGS=10 V | β |
| Input Capacitance (Ciss) | 1.578 nF | β |
| Output Capacitance (Coss) | 788 pF | β |
| Reverse Transfer Capacitance (Crss) | 36 pF | β |
| Power Dissipation (Ptot) | 58 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-33 (TDSON-8 EP) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds max) | β | 40 V |
| Continuous Drain Current (Id) | β | 117 A |
| On-Resistance (Rds(on) max) | β | 2.67 mOhm |
| Power Dissipation (Pd) | β | 70 W (Tc) |
| Package / Case | β | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | β | Automotive |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| MSL Level | β | [DATA_NEEDED: MSL] |
| Substrate Compatibility | β | IMS substrates and legacy FR-4 |