IAUCN04S7L028ATMA1 vs IAUCN04S7N027GATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L028ATMA1 por Infineon y IAUCN04S7N027GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L028ATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $0,72 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) | 100 A | — |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | — |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | — |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | — |
| Gate Charge (Qg) | 24 nC at VGS=10 V | — |
| Input Capacitance (Ciss) | 1.578 nF | — |
| Output Capacitance (Coss) | 788 pF | — |
| Reverse Transfer Capacitance (Crss) | 36 pF | — |
| Disipación de potencia (Ptot) | 58 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TDSON-8-33 (TDSON-8 EP) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant | Compliant |
| Product Family | — | OptiMOS 7 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds max) | — | 40 V |
| Continuous Drain Current (Id) | — | 117 A |
| On-Resistance (Rds(on) max) | — | 2.67 mOhm |
| Power Dissipation (Pd) | — | 70 W (Tc) |
| Encapsulado / Carcasa | — | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | — | Automotive |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Nivel MSL | — | [DATA_NEEDED: MSL] |
| Substrate Compatibility | — | IMS substrates and legacy FR-4 |