IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
MPN: IAUCN04S7N027GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.98 | $98.00 |
| 500 | $0.84 | $420.00 |
| 1,000 | $0.72 | $720.00 |
Drop-in alternatives for IAUCN04S7N027GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IAUCN04S7N027GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds max) | 40 V |
| Continuous Drain Current (Id) | 117 A |
| On-Resistance (Rds(on) max) | 2.67 mOhm |
| Power Dissipation (Pd) | 70 W (Tc) |
| Package / Case | PG-THSOG-4-1 (SSO4G 5x6) |
| Mounting Type | Surface Mount |
| Qualification | Automotive |
| RoHS Status | Compliant |
| Substrate Compatibility | IMS substrates and legacy FR-4 |
IAUCN04S7N027GATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | SENSE (Kelvin) — Kelvin source connection for gate-drive return (electrically tied to pin 3) |
| Pin 3 | SOURCE — Source power terminal (high-current) |
| Pin 4 | DRAIN — Drain terminal and exposed thermal pad |
Safe Operating Area (DC, Tc=25C)
Typical Applications
IAUCN04S7N027GATMA1 is suitable for 6 applications: 12V Automotive ECU Power Switching, Synchronous Rectification in 48V-to-12V DC-DC Converters, USB-PD Power Path Protection, Brushless DC (BLDC) Motor Half-Bridge, Battery Management System (BMS) Protection, Hot-Swap / E-Fuse for 24V Industrial Systems.
12V Automotive ECU Power Switching
The IAUCN04S7N027GATMA1's 40 V Vds rating and 117 A continuous drain current make it ideal for 12 V automotive ECU high-side and low-side switching, where it can handle inrush currents from solenoids, motors, and incandescent lamp loads. The 2.67 mOhm maximum Rds(on) limits steady-state conduction losses to roughly 3.7 W at 37 A continuous load, keeping the junction temperature rise within safe margins on a properly designed IMS substrate. Placed between the 12 V battery rail and the load, it provides solid-state switching that replaces mechanical relays with no moving parts. Unlike an electromechanical relay it adds no coil current draw and operates silently, but requires a gate driver circuit.
Recommended
Synchronous Rectification in 48V-to-12V DC-DC Converters
The IAUCN04S7N027GATMA1 serves as the synchronous rectifier (low-side) MOSFET in isolated and non-isolated 48 V-to-12 V DC-DC converters for mild-hybrid electric vehicles. Its 2.67 mOhm Rds(on) and OptiMOS 7 low-Qg / low-Qoss cell architecture reduce switching losses by up to 30 percent compared to OptiMOS 6 predecessors, improving full-load efficiency by 1.5-2.5 percent at 100 kHz switching frequency. The 117 A continuous rating supports converters delivering up to 1.4 kW continuous. Placed across the synchronous rectifier position, it competes with the primary switch's freewheeling diode - the lower Rds(on) cuts conduction loss substantially. The SSO4G Kelvin-source pin is critical here because the high-di/dt switching edges would otherwise couple switching noise into the gate drive.
Recommended
USB-PD Power Path Protection
The IAUCN04S7N027GATMA1 protects USB-PD power paths in automotive head units and USB-C chargers from short-circuit and overcurrent events. Its 40 V Vds comfortably exceeds the 20 V maximum USB-PD EPR voltage with 2x derating margin, and the 117 A continuous rating supports 240 W EPR (28 V at 8.6 A) power delivery. The 2.67 mOhm Rds(on) adds only 0.07 W of conduction loss at full 8.6 A load, well within thermal limits. Placed between the source voltage rail and the VBUS output, it acts as a hot-swap / eFuse element. Compared to a dedicated hot-swap controller IC it offers lower Rds(on) but lacks integrated current sensing and fault timing.
Recommended
Brushless DC (BLDC) Motor Half-Bridge
The IAUCN04S7N027GATMA1 forms one half-bridge position in a 3-phase BLDC motor drive for automotive cooling fans, water pumps, and EPS systems. Each phase uses two MOSFETs (high-side + low-side) so a 3-phase drive needs six IAUCN04S7N027GATMA1 devices. The 117 A continuous current supports motors drawing up to 80 A peak phase current with proper thermal design, and the 40 V Vds handles back-EMF spikes from 12 V motors with adequate margin. The SSO4G 5x6 package allows compact 6-MOSFET layouts on IMS substrates for high power density. Placed in the half-bridge with a 3-phase gate driver, it switches at 20-50 kHz PWM frequency - OptiMOS 7's low switching loss keeps driver losses manageable.
Recommended
Battery Management System (BMS) Protection
The IAUCN04S7N027GATMA1 serves as the charge / discharge MOSFET in 12 V automotive BMS modules, disconnecting the battery from the load during fault conditions. Its 117 A continuous rating handles 12 V cranking pulses up to 1000 A peak (with appropriate TVS protection for the inrush), and the 40 V Vds covers jump-start transients up to 24 V. The 2.67 mOhm Rds(on) contributes only 0.06 V drop at 23 A continuous discharge current, well within the 0.1 V typical BMS budget. Placed in series with the battery terminal, it acts as a solid-state main contactor. Unlike a mechanical contactor it has no arc risk but requires careful thermal management at high continuous currents.
Recommended
Hot-Swap / E-Fuse for 24V Industrial Systems
The IAUCN04S7N027GATMA1 implements a hot-swap or electronic fuse function in 24 V industrial PLCs, sensor hubs, and rack-mount equipment. Its 40 V Vds gives 67 percent derating margin over a 24 V nominal rail, and the 117 A rating handles inrush transients from large bulk capacitors downstream. The 2.67 mOhm Rds(on) means the steady-state voltage drop is only 0.13 V at 50 A, well below the 0.25 V typical hot-swap budget. Placed between the input rail and the downstream DC-DC converter, it limits inrush current via gate slew-rate control. Compared to a dedicated hot-swap IC, this MOSFET offers higher current density at lower cost but requires external current-sense and gate-control circuitry.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N027GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N019GATMA1 | IAUC100N04S6N028ATMA1 | IAUCN08S7N024ATMA1 |
|---|---|---|---|---|
| Package | PG-THSOG-4-1 (SSO4G 5x6) | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same | PG-THSOG-4-1 (SSO4G 5x6) - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Vds (Drain-Source Voltage) | 40 V | 40 V | 40 V | 80 V |
| Continuous Drain Current (Id) | 117 A | 117 A | 100 A | [DATA_NEEDED] |
| Rds(on) max | 2.67 mOhm | 1.9 mOhm | 2.8 mOhm | 2.4 mOhm |
| Power Dissipation (Tc) | 70 W | 70 W | 65 W | [DATA_NEEDED] |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 6 | OptiMOS 7 |
| Automotive Qualified | Yes | Yes | Yes | Yes |
| Kelvin Source Pin | Yes | Yes | Yes | Yes |
| Substrate Compatibility | IMS + FR-4 | IMS + FR-4 | IMS + FR-4 | IMS + FR-4 |
Key Differentiators
- OptiMOS 7 generation delivers 30% lower switching loss than OptiMOS 6 at 100 kHz (vs IAUC100N04S6N028ATMA1)
- Lowest Rds(on) in this voltage class with 117 A continuous current (vs IAUCN04S7N019GATMA1)
- Kelvin-source pin enables clean switching at high di/dt (vs IAUCN04S7L050HATMA1)
Design Notes
Estimated: at full 117 A continuous drain current with Rds(on) of 2.67 mOhm, conduction loss is approximately 36.5 W. The PG-THSOG-4-1 package has a junction-to-case thermal resistance that allows 70 W dissipation at Tc, but only with substantial PCB copper or IMS substrate cooling. For continuous operation above 30 A, design for at least 6 square centimeters of 2 oz copper per device or use an IMS substrate with high thermal conductivity dielectric. Without adequate cooling the junction temperature will exceed 150 C and trigger thermal shutdown.
Use the Kelvin-source pin (pin 2) as the gate-drive return path, not the power source (pin 3). This isolates the high-current source path from the gate loop, preventing switching noise from coupling into Vgs and causing shoot-through or gate oscillation. Place a 10 Ohm gate resistor close to pin 1 to dampen ringing. Use multiple vias on the exposed drain pad to maximize heat transfer to inner PCB copper layers; recommended pattern is 9-16 filled vias on a 1.0 mm pitch.
Keep the gate-drive loop area (gate resistor -> pin 1 -> pin 2 -> gate driver GND) under 1 square centimeter to minimize parasitic inductance. Avoid running the high-current drain-source loop near sensitive analog signal traces; the high-di/dt switching transitions (up to 5 A/ns) can inject noise into nearby circuits. For multi-MOSFET parallel operation (e.g., in high-current half-bridges), use symmetrical gate-drive routing and matched Rds(on) bins to ensure balanced current sharing and prevent thermal runaway between paralleled devices.
Do not exceed the absolute maximum Vgs rating (typically +/-20 V for OptiMOS 7); overshoot above this will permanently damage the gate oxide. Add a TVS diode or gate-source Zener clamp (e.g., 16 V) if the gate driver can produce transients above 18 V during fault conditions. Do not operate continuously near the SOA boundary at low Vds (linear region) - the IAUCN04S7N027GATMA1 is optimized for fully-on (saturated) switching, not linear-mode operation.
Compliance Information
AEC-Q100 qualified per Infineon automotive OptiMOS 7 family. RoHS and REACH compliant. Lead-free and halogen-free per Infineon product environmental compliance documentation.
