IAUCN04S7L042GATMA1 vs IAUCN04S7N019GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L042GATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveInfineon
IAUCN04S7N019GATMA1
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L042GATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 40V | OptiMOS 7 |
| Technology | Trench N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tj) | 77 A | 147 A |
| Maximum Power Dissipation (PD, Tc) | 50 W | β |
| Package | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Mounting Type | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | [DATA_NEEDED: junction temperature range from datasheet] |
| Polarity / Channel Type | N-Channel enhancement mode | β |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Packing | Tape & Reel (per -ATMA1 suffix) | β |
| Target Substrate | IMS substrate and legacy FR4 designs | β |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | β |
| Transistor Type | β | N-Channel MOSFET |
| On-Resistance RDS(on) typical | β | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | β | 81 W |
| Substrate Compatibility | β | IMS substrates and legacy PCB |
| Automotive Qualification | β | AEC-Q101 (per family datasheet) |
| Lead-Free | β | Yes |
| Tape and Reel Packaging | β | Yes (per ATMA1 suffix) |