IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
MPN: IAUCN04S7N019GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.15 | $575.00 |
| 1,000 | $0.98 | $980.00 |
| 5,000 | $0.82 | $4,100.00 |
Drop-in alternatives for IAUCN04S7N019GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN04S7L050HATMA1
✅ Drop-In✓ In Stock
$0.83 / Unit
View Datasheet →IAUCN08S7N024ATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →IAUCN10S7L110TATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC100N04S6N028ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.42 / Unit
View Datasheet →ISC037N12NM6ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$3.62 / Unit
View Datasheet →ISK057N04LM6ATSA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.3 / Unit
View Datasheet →IAUCN04S7N019GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tj) | 147 A |
| On-Resistance RDS(on) typical | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | 81 W |
| Package | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Mounting Type | Surface Mount |
| Substrate Compatibility | IMS substrates and legacy PCB |
| Automotive Qualification | AEC-Q101 (per family datasheet) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Tape and Reel Packaging | Yes (per ATMA1 suffix) |
IAUCN04S7N019GATMA1 Pin Configuration
| Pin 1 | Source — Power source (high current) |
| Pin 2 | Source — Power source (high current) |
| Pin 3 | Source — Power source (high current) |
| Pin 4 | Source — Power source (high current) |
| Pin 5 | Gate — Gate drive input |
| Pin 6 | Kelvin Source — Kelvin source connection for gate drive return |
| Pin 7 | Drain — Power drain (thermal pad) |
| Pin 8 | Drain — Power drain (thermal pad) |
Safe Operating Area (SOA)
Typical Applications
IAUCN04S7N019GATMA1 is suitable for 6 applications: Automotive 12 V Load Switch, Electric Power Steering (EPS) Motor Drive, BLDC Motor Driver (Battery Tools, Pumps, Fans), Battery Management System (BMS) Protection Switch, DC-DC Converter Primary-Side Switch, 48 V Mild-Hybrid System Switch.
Automotive 12 V Load Switch
The IAUCN04S7N019GATMA1 fits 12 V automotive load-switch applications where its 40 V VDS rating provides ample headroom above 24 V load-dump transients and its 1.95 mOhm typical RDS(on) minimizes conduction losses at 30-100 A continuous loads. Placed between the battery rail and ECUs, PTC heaters, or lighting modules, the part's AEC-Q101 automotive qualification and SSO4G Kelvin-source pin reduce switching losses. Compared to a 5 mOhm alternative, the 1.95 mOhm RDS(on) saves approximately 60 W at 100 A continuous load - meaningful for fuel-efficiency targets.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUCN04S7N019GATMA1 is well-matched to EPS motor-drive inverter stages where the 147 A continuous drain current rating covers peak torque demands during parking maneuvers. The 1.95 mOhm RDS(on) keeps inverter losses below 30 W per switch at 100 A peak phase current, easing thermal design in the constrained EPS housing. The Kelvin-source connection stabilizes gate drive during the high dV/dt switching transitions typical of space-vector PWM at 20 kHz, reducing shoot-through risk versus non-Kelvin MOSFETs.
Recommended
BLDC Motor Driver (Battery Tools, Pumps, Fans)
The IAUCN04S7N019GATMA1 in SSO4G 5x6 mm supports compact BLDC motor driver designs for 18-24 V cordless tools, water pumps, and cooling fans. The 1.95 mOhm RDS(on) delivers >96% inverter efficiency at 30 A phase current, extending battery runtime in cordless applications. The package's IMS-substrate compatibility enables direct mounting to a metal heatsink structure that doubles as motor housing, reducing BOM cost and assembly steps versus FR4 + discrete heatsink approaches.
Recommended
Battery Management System (BMS) Protection Switch
The IAUCN04S7N019GATMA1 functions as a high-side or low-side protection switch in 12-24 V BMS modules, where its 147 A continuous rating covers peak discharge currents while the 1.95 mOhm RDS(on) minimizes voltage drop across the protection path. The 40 V VDS rating supports 24 V battery systems with margin for transient reversals. AEC-Q101 qualification and the SSO4G's Kelvin-source pin enable reliable, low-loss switching under short-circuit and reverse-polarity events typical of automotive battery protection scenarios.
Recommended
DC-DC Converter Primary-Side Switch
The IAUCN04S7N019GATMA1 serves as a primary-side high-voltage switch in non-isolated buck converters and sync-rectifier-replacement topologies for 12 V and 24 V rails. The 1.95 mOhm RDS(on) reduces conduction losses to below 4 W at 50 A continuous load, supporting >95% converter efficiency. The SSO4G 5x6 mm footprint with Kelvin-source enables fast switching (>100 kHz) by minimizing gate-drive loop inductance, which is critical for compact point-of-load converters in automotive and industrial systems.
Recommended
48 V Mild-Hybrid System Switch
The IAUCN04S7N019GATMA1 can be deployed as a redundant or low-side switch in 48 V mild-hybrid (MHEV) subsystems operating below the 40 V VDS ceiling, particularly in 12 V sub-rails within the MHEV architecture. While the 40 V rating limits direct 48 V main-rail use (where the IAUCN10S7L110TATMA1 is preferred), the 1.95 mOhm RDS(on) provides unmatched efficiency in auxiliary 12 V rails fed from the 48 V bus via isolated converters. The AEC-Q101 rating and SSO4G package align with automotive reliability requirements.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N019GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7L050HATMA1 | IAUCN08S7N024ATMA1 | IAUCN10S7L110TATMA1 | IAUC100N04S6N028ATMA1 | ISC037N12NM6ATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SSO4G 5x6 mm (PG-THSOG-4-1) | SSO4G 5x6 mm - same | SSO4G 5x6 mm - same | SSO4G 5x6 mm - same | SSO4G-class - same footprint | SSO8 5x6 mm - same footprint | PQFN 5x6 mm - same footprint |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 80 V | 100 V | 40 V | 120 V | 40 V |
| Continuous Drain Current | 147 A (Tj) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 100 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Typical RDS(on) at VGS=10V | 1.95 mOhm | ~5.0 mOhm | ~2.4 mOhm | ~11.0 mOhm | ~2.8 mOhm | ~3.7 mOhm | ~5.7 mOhm |
| Power Dissipation (Tc) | 81 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS 7 | OptiMOS | OptiMOS 6 | OptiMOS 6 |
Key Differentiators
- Lowest RDS(on) in 40V OptiMOS 7 SSO4G family (vs IAUCN04S7L050HATMA1)
- Kelvin-source pin reduces switching losses (vs non-Kelvin MOSFETs in similar packages)
- IMS substrate compatibility (vs FR4-only MOSFETs)
- Automotive-grade reliability with broad distributor stock (vs industrial-grade alternatives)
Design Notes
At 100 A continuous drain current with the part mounted on an FR4 PCB with 1 oz copper, the IAUCN04S7N019GATMA1's 1.95 mOhm RDS(on) dissipates approximately 19.5 W, raising junction temperature significantly above ambient. The SSO4G 5x6 mm package supports direct IMS (Insulated Metal Substrate) mounting for best thermal performance - datasheet curves show ~3x lower thermal impedance versus FR4. Estimated: Tj rise = P * theta_JA; for FR4 theta_JA ~50 C/W gives ~975 C rise (unacceptable), so IMS substrate or substantial copper pour is mandatory above 30 A continuous loads.
Place the gate driver IC within 10 mm of the gate pin (pin 5) and Kelvin-source pin (pin 6) to minimize gate-drive loop inductance. The SSO4G package's dedicated Kelvin-source pin decouples the gate return from the high-current source path - bypass capacitors must connect to the Kelvin-source pin, not the power-source pins. Use a 4-layer PCB with a continuous ground plane beneath the device to provide thermal spreading and low-inductance return paths for high dV/dt switching transients.
Drive the gate with a 10 V VGS for full RDS(on) specification. For PWM applications above 50 kHz, use a gate driver with peak sink/source current of at least 1 A to charge the Qg quickly. Estimated: switching loss Psw = 0.5 * VDS * ID * (Qg + Qgd)/Ig * fsw. A slow driver (200 mA) at 100 kHz can double the switching losses versus a 1 A driver. Verify the driver's negative VGS capability (typically -3 V to -5 V) to prevent false turn-on from dV/dt-induced gate voltage.
Do not exceed 40 V VDS even under transient conditions - 12 V automotive systems can experience 24 V load-dump spikes that may exceed 40 V if not clamped. Add a TVS diode (e.g., 33 V bidirectional) from drain to source if the application sees unclamped transients. The Kelvin-source pin (pin 6) MUST be connected to the gate driver ground reference - leaving it floating defeats the switching-loss reduction and can cause gate-drive instability.
Compliance Information
AEC-Q101 (automotive MOSFET standard) qualified per Infineon OptiMOS 7 datasheet. RoHS and REACH compliant per DigiKey/Mouser product listings. Lead-free and halogen-free per automotive-grade semiconductor packaging standards.
