IAUCN04S7N006ATMA1 - 40V 175A OptiMOS N-Channel MOSFET | Infineon
MPN: IAUCN04S7N006ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.91 | $1.91 |
| 10 | $1.78 | $17.80 |
| 100 | $1.52 | $152.00 |
| 500 | $1.31 | $655.00 |
| 1,000 | $1.12 | $1,120.00 |
| 5,000 | $0.95 | $4,750.00 |
Drop-in alternatives for IAUCN04S7N006ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN04S7N006ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 175 A |
| On-State Resistance (RDS(on)) | 0.63 mOhm (typ at VGS = 10 V) |
| Technology | OptiMOS 5 (trench) |
| Package | PG-TDSON-8-43 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C |
| Junction Temperature Max | 175 C |
| Automotive Qualification | AEC-Q101 |
| Lead-Free / RoHS | Yes (compliant) |
IAUCN04S7N006ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal (low-side return) |
| Pin 2 | Source — Source terminal |
| Pin 3 | Source — Source terminal |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin 9 | Drain (Exposed Pad) — Drain terminal and thermal pad - solder to PCB copper |
Safe Operating Area (DC)
Typical Applications
IAUCN04S7N006ATMA1 is suitable for 6 applications: Automotive BLDC Motor Drive, 12 V Synchronous Rectification, Battery Management Load Switch (E-Fuse), High-Current USB-C / USB-PD Power Switch, Industrial 24 V / 36 V DC-DC Converter, Robotics and Drone Power Distribution.
Automotive BLDC Motor Drive
The IAUCN04S7N006ATMA1 is purpose-built for 12 V automotive BLDC motor drives such as electric power steering (EPS), water pumps, oil pumps, and cooling fans. Its 175 A continuous drain current and 0.63 mOhm RDS(on) keep conduction losses to a minimum at high phase currents, while the AEC-Q101 qualification ensures reliable operation under automotive thermal and vibration stress. In a typical three-phase inverter, three half-bridges using this MOSFET switch at 20-50 kHz PWM with low switching loss thanks to the OptiMOS 5 cell design. The PG-TDSON-8-43 package exposes the drain pad for direct PCB heatsinking, eliminating the need for an external heatsink in most under-hood BLDC modules.
Recommended
12 V Synchronous Rectification
Used as the low-side or high-side synchronous rectifier in 12 V buck or boost DC-DC converters, the IAUCN04S7N006ATMA1 replaces a Schottky diode to cut conduction loss by more than half. With 0.63 mOhm RDS(on) at 10 V VGS, a 50 A synchronous stage dissipates roughly 1.6 W per FET versus 25 W for a comparable Schottky, dramatically improving converter efficiency and reducing heatsink requirements. The OptiMOS 5 cell design keeps Qg and Qoss low, allowing switching frequencies of 200-500 kHz without penalty. The PG-TDSON-8-43 exposed-pad footprint handles the continuous thermal load on a properly sized copper pour.
Recommended
Battery Management Load Switch (E-Fuse)
The IAUCN04S7N006ATMA1 functions as the main disconnect switch in 12 V automotive e-fuse and battery management modules, where it must carry full-load current (often 100-150 A) and interrupt fault currents within microseconds. Its 175 A continuous current rating, low RDS(on), and AEC-Q101 qualification make it ideal for replacing mechanical contactors or fuses with a solid-state solution that can be reset via the BMS. The MOSFET is driven by an isolated gate driver and current-sense amplifier that triggers turn-off on overcurrent. The wide 40 V VDS rating provides comfortable margin against load-dump transients on the 12 V bus.
Recommended
High-Current USB-C / USB-PD Power Switch
In automotive USB-C charging ports delivering up to 100 W (20 V / 5 A) via USB-PD, the IAUCN04S7N006ATMA1 acts as the high-side load switch protecting the downstream cable and device from overcurrent. The 40 V VDS comfortably handles the 20 V PD bus plus inductive transients, while 0.63 mOhm RDS(on) keeps the on-state voltage drop under 50 mV even at 80 A, preserving efficiency. AEC-Q101 ensures the port survives the underhood thermal environment, and the small PG-TDSON-8-43 footprint enables compact multi-port hub designs.
Recommended
Industrial 24 V / 36 V DC-DC Converter
Although rated for 40 V, the IAUCN04S7N006ATMA1 is sometimes deployed in industrial 24 V and 36 V DC-DC converters where the bus is regulated and never transients above the 40 V VDS limit. Its low RDS(on) and high current capability suit high-power-density telecom and server point-of-load converters. The wide SOA and 175 C maximum junction temperature give designers headroom during fault conditions. The PG-TDSON-8-43 footprint simplifies board layout, and the device's popularity in the automotive market guarantees multi-source availability for long-lifecycle industrial designs.
Recommended
Robotics and Drone Power Distribution
In robotics, drones, and other high-performance battery-powered platforms running on 6S-12S Li-Po (up to 50.4 V fully charged), the IAUCN04S7N006ATMA1 is used as a power-path switch in buck regulators that step battery voltage down to 5 V or 12 V for motors and controllers. Its very low RDS(on) preserves battery runtime, and the small surface-mount PG-TDSON-8-43 package is a strong fit for weight-sensitive UAV and small-robot designs. Designers must add a pre-regulator or TVS clamp to keep VDS within 40 V during regenerative braking events where motor energy backfeeds the bus.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N006ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN04S7N009ATMA1 | IAUCN04S6N009TATMA1 | IAUC100N04S6L020ATMA1 | IAUZN04S7L030ATMA1 | VBQA1401 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-43 | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) | PG-TDSON-8-43 (same) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (ID) | 175 A | [DATA_NEEDED] | [DATA_NEEDED] | 100 A | [DATA_NEEDED] | 370 A (pulse rating) |
| On-State Resistance (RDS(on)) | 0.63 mOhm @ VGS=10V | ~0.9 mOhm | ~0.9 mOhm (older gen) | ~2.0 mOhm | ~0.78 mOhm | ~0.78 mOhm |
| Technology Generation | OptiMOS 5 (S7) | OptiMOS 5 (S7) | OptiMOS 4 (S6) | OptiMOS 4 (S6) | OptiMOS 5 (S7) | Chinese design (VBsemi) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 (claimed) |
| Unit Price @ 1k (approx, as of 2026-09-14) | $1.12 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in the 40 V OptiMOS family (vs IAUZN04S7L030ATMA1)
- Newer-generation OptiMOS 5 process (vs IAUCN04S6N009TATMA1)
- Cross-brand supply chain diversification option (vs VBQA1401 (VBsemi))
Design Notes
Estimated: At continuous drain current of 100 A with VGS = 10 V, conduction loss is roughly P = ID^2 x RDS(on) = 100^2 x 0.00063 = 6.3 W. The PG-TDSON-8-43 package has a typical theta_JA of ~50 C/W on a 1 oz 1-square-inch copper pour, producing a junction temperature rise of about 315 C - clearly above the 175 C maximum. To stay within the 175 C limit at 100 A continuous, the copper pad must be at least 4-6 square inches or augmented with an external heatsink; otherwise limit continuous current to ~50 A.
The drain-up PG-TDSON-8-43 footprint requires a substantial copper pour on the top layer connected to the exposed pad to spread heat. Use multiple thermal vias (0.3 mm drill, 0.5 mm pad, 1.0 mm pitch) under the exposed pad to push heat into the bottom or inner copper layers. Keep the source-return copper unbroken from the package to the gate driver's ground Kelvin pin to avoid source-inductance-induced gate-overshoot during fast switching transitions.
Do not exceed the 40 V VDS rating under any transient condition; automotive 12 V systems can produce load-dump pulses exceeding 35 V per ISO 7637-2, leaving only a 5 V safety margin. Always add a TVS diode (such as a 33 V SMBJ) or RC snubber across drain-source when driving inductive loads like motors or solenoids. Also, verify that the gate-drive voltage reaches at least 10 V for full RDS(on) - a 5 V logic-level drive will leave the MOSFET in its linear region and dramatically increase loss.
Minimize the gate-drive loop by placing the gate driver IC within 5-10 mm of the gate pin, and use a 10-22 ohm gate resistor to damp parasitic ringing. Keep the power loop (drain-source) compact and avoid narrow traces that add inductance. For high-current designs (>50 A continuous), use multiple PCB layers in parallel for the drain tab and source return rather than relying on a single 2 oz layer.
Compliance Information
AEC-Q101-qualified automotive MOSFET per Infineon product page. RoHS and lead-free confirmed via DigiKey product listing (PG-TDSON-8-43 package). Halogen-free status not explicitly listed in verified data.
