IAUCN04S7N006TATMA1 vs IAUCN04S7N027GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N006TATMA1 by Infineon and IAUCN04S7N027GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N006TATMA1
IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7N006TATMA1 β ActiveInfineon
IAUCN04S7N027GATMA1
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N006TATMA1 | IAUCN04S7N027GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.66 | $0.72 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, T_j) | 425 A | β |
| Power Dissipation (P_D, T_C) | 205 W | β |
| R_DS(on) (typ, V_GS=10V) | 0.63 mΞ© | β |
| Technology | OptiMOS 7 (shielded-gate trench) | β |
| Package | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj min/max] | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G at V_GS=10V] | β |
| Automotive Grade | Yes (Infineon automotive MOSFET line) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL] |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds max) | β | 40 V |
| Continuous Drain Current (Id) | β | 117 A |
| On-Resistance (Rds(on) max) | β | 2.67 mOhm |
| Power Dissipation (Pd) | β | 70 W (Tc) |
| Package / Case | β | PG-THSOG-4-1 (SSO4G 5x6) |
| Qualification | β | Automotive |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage Max (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Substrate Compatibility | β | IMS substrates and legacy FR-4 |