IAUCN04S7N012ATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N012ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N012ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.62 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS-7 (trench) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΞ© | 2.5 mOhm |
| On-State Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg total] |
| Operating Temperature Range | -55 Β°C to +175 Β°C [DATA_NEEDED: junction temperature max from datasheet] | β |
| Package | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) | β |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot at TC=25Β°C] | β |
| Thermal Resistance RΞΈJA | [DATA_NEEDED: RΞΈJA on JEDEC PCB] | β |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Polarity | N-Channel | N-Channel |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Lead-Free | β | Yes |