IAUCN04S7N012ATMA1 - 40V 1.2mΩ 120A N-Ch MOSFET | Infineon
MPN: IAUCN04S7N012ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.67 | $16.70 |
| 100 | $1.49 | $149.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
IAUCN04S7N012ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to deliver high current to a load with minimal conduction loss. MOSFETs sit within the discrete-semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. The OptiMOS-7 platform is Infineon's latest-generation trench MOSFET family optimized for switching power-conversion applications, providing reduced gate charge, lower output capacitance, and improved thermal behavior versus prior generations. This 40 V rating places it in the low-voltage sweet spot for 12 V automotive systems, where transients from load-dump can spike above 35 V and still leave headroom.
Key features include 1.2 mΩ maximum RDS(on) at VGS = 10 V, 120 A continuous drain current at 25 °C, an automotive-grade qualification, and an exposed-drain PG-TDSON-8-34 pad that delivers a junction-to-ambient thermal resistance suitable for high-current switching. The package is halogen-free and qualified for the harsh under-hood automotive environment. The 8-pin layout provides a large source-connected thermal pad that doubles as the electrical source connection.
The OptiMOS-7 cell design shrinks figure-of-merit (FOM = RDS(on) × Qg) versus prior generations, which directly reduces switching losses in high-frequency converters. For a 12 V automotive bus running at 250 kHz, the IAUCN04S7N012 enables synchronous-rectifier stages with sub-nanosecond dead-time tolerance and minimal reverse-recovery charge. The trench-gate structure delivers a low threshold voltage suitable for direct 3.3 V microcontroller gate-drive interfaces.
Typical applications include automotive 12 V BLDC motor drives (EPS, water pumps, oil pumps, fans), high-current synchronous rectification in DC-DC converters, battery-disconnect switches in mild-hybrid 48 V-12 V systems, and high-side load switches in ECU power distribution. The 120 A rating also supports server VRM stages where 12 V to point-of-load conversion demands extreme current density.
When designing with this part, prioritize gate-drive strength: a 10 V VGS is required to reach the 1.2 mΩ RDS(on) figure, so a dedicated gate-driver IC is preferred over direct MCU drive. The exposed thermal pad must be soldered to a sufficiently large copper pour to achieve the rated continuous current without thermal runaway.
This page synthesizes distributor stock, drop-in alternatives sourced from cross-reference data, and practical design notes that go beyond the datasheet's typical-application section to help engineers make a sourcing decision.
Drop-in alternatives for IAUCN04S7N012ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN04S7N012ATMA1 (same form factor and footprint) — differing in Package, Technology, MSL Level, Automotive Qualification, FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N10S5N040ATMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IPG20N04S4L08ATMA1
✅ Drop-In✓ In Stock
$0.89 / Unit
View Datasheet →VBQA1401
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN04S7N012ATMA1 Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS-7 (trench) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mΩ |
| Package | PG-TDSON-8-34 (8-PowerTDFN) |
| Mounting Type | Surface Mount |
| Transistor Grade | Automotive (AEC-Q101) |
| RoHS Status | Compliant |
| Halogen-Free | Yes |
| MSL Level | 1 |
| Polarity | N-Channel |
IAUCN04S7N012ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (kelvin source for gate return) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input (10 V VGS for full RDS(on)) |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin EP | Drain — Drain connection and thermal pad (solder to large copper pour) |
Power Derating & Thermal Characteristics
No manufacturer-published SOA (Safe Operating Area) curve is available for IAUCN04S7N012ATMA1. Always operate within the absolute maximum ratings specified in the manufacturer datasheet.
Typical Applications
IAUCN04S7N012ATMA1 is suitable for 6 applications: Automotive 12V BLDC Motor Drive (EPS, water pump, oil pump, fan), High-Current Synchronous Rectification in 12V-to-PoL DC-DC, Battery-Disconnect Switch in 48V Mild-Hybrid Systems, Server & Datacenter 12V VRM Stages, Automotive ECU High-Side Load Switch, Industrial High-Power SMPS (Welding, UPS, Solar Inverter).
Automotive 12V BLDC Motor Drive (EPS, water pump, oil pump, fan)
The IAUCN04S7N012ATMA1 is purpose-built for 12 V automotive BLDC drives that drive pumps, fans, and electric-power-steering motors. Its 1.2 mΩ RDS(on) at VGS = 10 V keeps conduction loss under 1 W at 30 A continuous phase current, while the 120 A peak rating handles inrush and short-circuit events. The AEC-Q101 qualification and halogen-free PG-TDSON-8-34 package suit under-hood environments where junction temperatures regularly exceed 150 °C. Design tip: place the FET as close as possible to the phase node and use a 4-layer PCB with a 2 oz inner copper pour to sink heat.
Recommended
High-Current Synchronous Rectification in 12V-to-PoL DC-DC
In 12 V input, point-of-load DC-DC converters targeting 50-100 A output, the IAUCN04S7N012ATMA1 serves as the low-side synchronous rectifier FET. Its low RDS(on) keeps full-load efficiency above 96%, while the OptiMOS-7 cell design delivers low Qg and Qrr, reducing switching loss at 300-500 kHz switching frequencies. Designers should use a dedicated gate-driver (UCC27211A or similar) to achieve the 10 V VGS needed to reach the 1.2 mΩ on-state resistance figure.
Recommended
Battery-Disconnect Switch in 48V Mild-Hybrid Systems
In 48 V mild-hybrid electrical architectures, the IAUCN04S7N012ATMA1 can serve as a high-current battery-disconnect or pre-charge switch when paired with a fault-rated gate driver. Its 120 A continuous rating comfortably handles 10-15 kW peak loads, and the 40 V VDS provides margin against 48 V bus transients when combined with a TVS clamp. The automotive qualification streamlines PPAP documentation for OEM programs.
Recommended
Server & Datacenter 12V VRM Stages
High-density server VRM stages converting 12 V to sub-1 V at 100+ A per phase benefit from the IAUCN04S7N012ATMA1's ultra-low RDS(on). The exposed-drain PG-TDSON-8-34 pad enables direct cooling via top-side heatsink attach, supporting continuous operation at high ambient (45-55 °C) in 1U server chassis. The OptiMOS-7 figure-of-merit advantage compounds in multi-phase topologies where per-FET conduction loss compounds across phases.
Recommended
Automotive ECU High-Side Load Switch
The IAUCN04S7N012ATMA1 can be configured as a high-side load switch for ECU power distribution, replacing mechanical relays with solid-state switching. Its 120 A rating handles peak inrush for solenoids, lights, and motors, while the 1.2 mΩ RDS(on) keeps steady-state loss negligible. The automotive qualification and halogen-free package meet OEM environmental specs; pair with a current-sense amplifier for fault reporting.
Recommended
Industrial High-Power SMPS (Welding, UPS, Solar Inverter)
Outside automotive, the IAUCN04S7N012ATMA1's 40 V / 120 A rating makes it attractive for industrial SMPS stages operating from 24 V or 36 V intermediate buses. Its low RDS(on) reduces heatsink requirements in space-constrained welding inverters and UPS systems. Use as a synchronous rectifier in 24 V-input telecom DC-DC bricks where high efficiency and ruggedness outweigh the automotive-grade cost premium.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN04S7N012ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N10S5N040ATMA1 | IPG20N04S4L08ATMA1 | VBQA1401 |
|---|---|---|---|---|
| Package | PG-TDSON-8-34 (8-PowerTDFN) | PG-TDSON-8-34 - same | PG-TDSON-8 - same family | PG-TDSON-8-34 - same |
| Brand | Infineon | Infineon | Infineon | VBsemi |
| Drain-Source Voltage (VDS) | 40 V | 100 V | 40 V | 40 V |
| Technology | OptiMOS-7 | OptiMOS-7 (100 V class) | OptiMOS (previous gen) | Trench MOSFET |
Key Differentiators
- Ultra-low RDS(on) of 1.2 mΩ at 10 V VGS in 40 V class (vs IPG20N04S4L08ATMA1)
- OptiMOS-7 generation with optimized figure-of-merit (vs Older OptiMOS generations)
- AEC-Q101 automotive qualification with halogen-free package (vs Industrial-only 40 V N-channel alternatives)
Design Notes
The PG-TDSON-8-34 package's exposed drain pad MUST be soldered to a copper pour of at least 100 mm² (per-layer, top side preferred) to approach the rated 120 A continuous current. Estimated: at 30 A continuous with 1.2 mΩ RDS(on), conduction loss is ~1.1 W; without a 100 mm² pour, junction-to-ambient thermal resistance exceeds 50 °C/W and the part will derate severely. For continuous currents above 50 A, add a top-side heatsink or use forced-air cooling.
Minimize the high-current loop between drain, source, and the output capacitor. Place input/output capacitors directly at the drain and source pads, not 5-10 mm away. The gate-drive loop (gate resistor -> gate pin -> source pin -> back to driver ground) should be a separate, small loop to avoid parasitic turn-on. Use a 4-layer PCB with a dedicated ground plane under the FET to reduce switching noise coupling.
Do not drive the gate directly from a 3.3 V microcontroller GPIO - the VGS(th) of the IAUCN04S7N012ATMA1 is typically 1.7-2.7 V, but full RDS(on) of 1.2 mΩ requires VGS = 10 V. Use a dedicated gate driver (e.g., Infineon EiceDRIVER or TI UCC27211A). Also: never exceed the VGS absolute maximum (±20 V for most OptiMOS-7 parts); add a 10 kΩ gate-source resistor to prevent floating-gate turn-on during transient events.
Use a gate resistor in the 4.7-10 Ω range to slow the switching edge (dV/dt) and reduce EMI. Faster edges (sub-5 ns) generate CM currents through the heatsink-to-ground capacitance; slower edges (10-20 ns) trade a few percent efficiency for 10-20 dB EMI reduction. For CISPR 25 Class 5 automotive EMI compliance, consider a snubber or RC damper across the drain-source.
Compliance Information
AEC-Q101 qualified per Infineon product page. Halogen-free and RoHS compliant per datasheet.
