IAUCN08S7L110ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon
IAUCN08S7L110ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L110ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.82 |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | β |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | β |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΞ© | β |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-TDSON-8-34 (TDSON-8) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOSβ’ (Trench) | Trench MOSFET (OptiMOS 3) |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Status | Compliant | β |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | β |
| Polarity | Single N-Channel | β |
| Configuration | Single | Dual N-Channel (independent MOSFETs) |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |